Physical and electrical properties of SiO2 layer synthesized by eco-friendly method

Jong Woong Kim; Young Seok Kim; Sung Jei Hong; Tae Hwan Hong; Jeong In Han

doi:10.1143/JJAP.49.05EA02

Physical and electrical properties of SiO₂ layer synthesized by eco-friendly method

Jong Woong Kim, Young Seok Kim, Sung Jei Hong, Tae Hwan Hong, Jeong In Han

Department of Chemical and Biochemical Engineering

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

SiO₂ thin film has a wide range of applications, including insulation layers in microelectronic devices, such as semiconductors and flat panel displays, due to its advantageous characteristics. Herein, we developed a new eco-friendly method for manufacturing SiO₂ nanoparticles and, thereby, SiO₂ paste to be used in the digital printing process for the fabrication of SiO₂ film. By excluding harmful Cl^- and NO3^- elements from the SiO₂ nanoparticle synthetic process, we were able to lower the heat treatment temperature for the SiO ₂ precursor from 600 to 300 °C and the diameter of the final SiO₂ nanoparticles to about 14 nm. The synthesized SiO₂ nanoparticles were dispersed in an organic solvent with additives to make a SiO₂ paste for feasibility testing. The SiO₂ paste was printed onto a glass substrate to test the feasibility of using it for digital printing. The insulation resistance of the printed film was high enough for it to be used as an insulation layer for passivation.

Original language	English
Pages (from-to)	05EA021-05EA024
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	49
Issue number	5 PART 2
DOIs	https://doi.org/10.1143/JJAP.49.05EA02
State	Published - May 2010

Access to Document

10.1143/JJAP.49.05EA02

Cite this

@article{2c0b3170a2ee4eef9fbff10e475b2a6a,

title = "Physical and electrical properties of SiO2 layer synthesized by eco-friendly method",

abstract = "SiO2 thin film has a wide range of applications, including insulation layers in microelectronic devices, such as semiconductors and flat panel displays, due to its advantageous characteristics. Herein, we developed a new eco-friendly method for manufacturing SiO2 nanoparticles and, thereby, SiO2 paste to be used in the digital printing process for the fabrication of SiO2 film. By excluding harmful Cl- and NO3- elements from the SiO2 nanoparticle synthetic process, we were able to lower the heat treatment temperature for the SiO 2 precursor from 600 to 300 °C and the diameter of the final SiO2 nanoparticles to about 14 nm. The synthesized SiO2 nanoparticles were dispersed in an organic solvent with additives to make a SiO2 paste for feasibility testing. The SiO2 paste was printed onto a glass substrate to test the feasibility of using it for digital printing. The insulation resistance of the printed film was high enough for it to be used as an insulation layer for passivation.",

author = "Kim, {Jong Woong} and Kim, {Young Seok} and Hong, {Sung Jei} and Hong, {Tae Hwan} and Han, {Jeong In}",

year = "2010",

month = may,

doi = "10.1143/JJAP.49.05EA02",

language = "English",

volume = "49",

pages = "05EA021--05EA024",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "5 PART 2",

}

TY - JOUR

T1 - Physical and electrical properties of SiO2 layer synthesized by eco-friendly method

AU - Kim, Jong Woong

AU - Kim, Young Seok

AU - Hong, Sung Jei

AU - Hong, Tae Hwan

AU - Han, Jeong In

PY - 2010/5

Y1 - 2010/5

N2 - SiO2 thin film has a wide range of applications, including insulation layers in microelectronic devices, such as semiconductors and flat panel displays, due to its advantageous characteristics. Herein, we developed a new eco-friendly method for manufacturing SiO2 nanoparticles and, thereby, SiO2 paste to be used in the digital printing process for the fabrication of SiO2 film. By excluding harmful Cl- and NO3- elements from the SiO2 nanoparticle synthetic process, we were able to lower the heat treatment temperature for the SiO 2 precursor from 600 to 300 °C and the diameter of the final SiO2 nanoparticles to about 14 nm. The synthesized SiO2 nanoparticles were dispersed in an organic solvent with additives to make a SiO2 paste for feasibility testing. The SiO2 paste was printed onto a glass substrate to test the feasibility of using it for digital printing. The insulation resistance of the printed film was high enough for it to be used as an insulation layer for passivation.

AB - SiO2 thin film has a wide range of applications, including insulation layers in microelectronic devices, such as semiconductors and flat panel displays, due to its advantageous characteristics. Herein, we developed a new eco-friendly method for manufacturing SiO2 nanoparticles and, thereby, SiO2 paste to be used in the digital printing process for the fabrication of SiO2 film. By excluding harmful Cl- and NO3- elements from the SiO2 nanoparticle synthetic process, we were able to lower the heat treatment temperature for the SiO 2 precursor from 600 to 300 °C and the diameter of the final SiO2 nanoparticles to about 14 nm. The synthesized SiO2 nanoparticles were dispersed in an organic solvent with additives to make a SiO2 paste for feasibility testing. The SiO2 paste was printed onto a glass substrate to test the feasibility of using it for digital printing. The insulation resistance of the printed film was high enough for it to be used as an insulation layer for passivation.

UR - http://www.scopus.com/inward/record.url?scp=77952962777&partnerID=8YFLogxK

U2 - 10.1143/JJAP.49.05EA02

DO - 10.1143/JJAP.49.05EA02

M3 - Article

AN - SCOPUS:77952962777

SN - 0021-4922

VL - 49

SP - 05EA021-05EA024

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

IS - 5 PART 2

ER -

Physical and electrical properties of SiO₂ layer synthesized by eco-friendly method

Abstract

Access to Document

Other files and links

Fingerprint

Cite this