Physics-based compact modeling of successive breakdown in ultrathin oxides

Georgios Panagopoulos; Chih Hsiang Ho; Soo Youn Kim; Kaushik Roy

doi:10.1109/TNANO.2014.2366379

Physics-based compact modeling of successive breakdown in ultrathin oxides

Georgios Panagopoulos
, Chih Hsiang Ho
, Soo Youn Kim
, Kaushik Roy

Division of System Semiconductor

Purdue University

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

In this letter, we present a physics-based compact SPICE model to predict statistical time-dependent dielectric breakdown (TDDB) in nanoscale circuits. In our model, an increase in the gate leakage current (I_G-BD) induced by TDDB is estimated using a quantum point contact (QPC) model depending on temperature. In addition, I_G-BD is based on the statistics of time to breakdown (BD) (t_BD) and location of percolation path (x_BD) in the channel considering third successive BDs. We show that the model can be easily implemented to circuit simulators to predict the degradation of circuit lifetime. With the proposed model, we validated post-BD I-V characteristics with experimental data in ultrathin oxide technology.

Original language	English
Article number	6940292
Pages (from-to)	7-9
Number of pages	3
Journal	IEEE Transactions on Nanotechnology
Volume	14
Issue number	1
DOIs	https://doi.org/10.1109/TNANO.2014.2366379
State	Published - 1 Jan 2015

Keywords

Gate leakage current
quantum point contact (QPC) model
soft breakdown (SBD)
successive breakdown
timedependent dielectric breakdown (TDDB)

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10.1109/TNANO.2014.2366379

Cite this

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title = "Physics-based compact modeling of successive breakdown in ultrathin oxides",

abstract = "In this letter, we present a physics-based compact SPICE model to predict statistical time-dependent dielectric breakdown (TDDB) in nanoscale circuits. In our model, an increase in the gate leakage current (IG-BD) induced by TDDB is estimated using a quantum point contact (QPC) model depending on temperature. In addition, IG-BD is based on the statistics of time to breakdown (BD) (tBD) and location of percolation path (xBD) in the channel considering third successive BDs. We show that the model can be easily implemented to circuit simulators to predict the degradation of circuit lifetime. With the proposed model, we validated post-BD I-V characteristics with experimental data in ultrathin oxide technology.",

keywords = "Gate leakage current, quantum point contact (QPC) model, soft breakdown (SBD), successive breakdown, timedependent dielectric breakdown (TDDB)",

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AU - Kim, Soo Youn

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AB - In this letter, we present a physics-based compact SPICE model to predict statistical time-dependent dielectric breakdown (TDDB) in nanoscale circuits. In our model, an increase in the gate leakage current (IG-BD) induced by TDDB is estimated using a quantum point contact (QPC) model depending on temperature. In addition, IG-BD is based on the statistics of time to breakdown (BD) (tBD) and location of percolation path (xBD) in the channel considering third successive BDs. We show that the model can be easily implemented to circuit simulators to predict the degradation of circuit lifetime. With the proposed model, we validated post-BD I-V characteristics with experimental data in ultrathin oxide technology.

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KW - quantum point contact (QPC) model

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Physics-based compact modeling of successive breakdown in ultrathin oxides

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Keywords

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