Abstract
A ZnCrO layer grown on a Pt (111)/Al 2O 3 (0001) substrate exhibits a lattice displacement-induced ferroelectric behavior due to a modulation in the lattice translation symmetry. The top-to-bottom Pt/ZnCrO/Pt structure shows asymmetric hysteresis loops in positive and negative voltage bias regions. This is attributed to a change in the Schottky emission rate due to the nonlinear polarization of the ZnCrO barrier. The characteristics of the hysteresis loops depend on the film-textures of ZnCrO, which vary with the oxygen partial pressure during the growth stage of the ZnCrO layers. The results suggest that ZnCrO has efficacy characteristics for applications in the non-volatile resistive-switching systems.
Original language | English |
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Pages (from-to) | 1891-1896 |
Number of pages | 6 |
Journal | Journal of the Korean Physical Society |
Volume | 60 |
Issue number | 11 |
DOIs | |
State | Published - Jun 2012 |
Keywords
- Cr-doped ZnO thin film
- Electrical hysteresis
- Polarization-dependent asymmetric conduction
- Sputtering