Polarization-dependent asymmetric hysteresis behavior in ZnCrO layers

Youngmin Lee, Deuk Young Kim, Sejoon Lee, Dejun Fu

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

A ZnCrO layer grown on a Pt (111)/Al 2O 3 (0001) substrate exhibits a lattice displacement-induced ferroelectric behavior due to a modulation in the lattice translation symmetry. The top-to-bottom Pt/ZnCrO/Pt structure shows asymmetric hysteresis loops in positive and negative voltage bias regions. This is attributed to a change in the Schottky emission rate due to the nonlinear polarization of the ZnCrO barrier. The characteristics of the hysteresis loops depend on the film-textures of ZnCrO, which vary with the oxygen partial pressure during the growth stage of the ZnCrO layers. The results suggest that ZnCrO has efficacy characteristics for applications in the non-volatile resistive-switching systems.

Original languageEnglish
Pages (from-to)1891-1896
Number of pages6
JournalJournal of the Korean Physical Society
Volume60
Issue number11
DOIs
StatePublished - Jun 2012

Keywords

  • Cr-doped ZnO thin film
  • Electrical hysteresis
  • Polarization-dependent asymmetric conduction
  • Sputtering

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