Polarization mode basis functions for modeling insulator-coated Through-Silicon Via (TSV) interconnections

Jin Han Ki; Madhavan Swaminathan

doi:10.1109/SPI.2009.5089849

Polarization mode basis functions for modeling insulator-coated Through-Silicon Via (TSV) interconnections

Jin Han Ki
, Madhavan Swaminathan

Department of Electronics & Electrical Engineering

Georgia Institute of Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

15 Scopus citations

Abstract

For the design of high-density 3-D integration, this paper presents a method to model through-silicon via (TSV) interconnections. Focusing on the modeling of annular insulator coating around the TSV, this paper proposes a new type of modal basis functions that describe polarization current density distribution in insulator. The equivalent network including modal excess capacitance from the basis functions provides accurate electrical characteristics, compared with analytic and EM simulation results.

Original language	English
Title of host publication	2009 IEEE Workshop on Signal Propagation on Interconnects, SPI '09
DOIs	https://doi.org/10.1109/SPI.2009.5089849
State	Published - 2009
Event	2009 IEEE Workshop on Signal Propagation on Interconnects, SPI '09 - Strasbourg, France Duration: 12 May 2009 → 15 May 2009

Publication series

Name	2009 IEEE Workshop on Signal Propagation on Interconnects, SPI '09

Conference

Conference	2009 IEEE Workshop on Signal Propagation on Interconnects, SPI '09
Country/Territory	France
City	Strasbourg
Period	12/05/09 → 15/05/09

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10.1109/SPI.2009.5089849

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title = "Polarization mode basis functions for modeling insulator-coated Through-Silicon Via (TSV) interconnections",

abstract = "For the design of high-density 3-D integration, this paper presents a method to model through-silicon via (TSV) interconnections. Focusing on the modeling of annular insulator coating around the TSV, this paper proposes a new type of modal basis functions that describe polarization current density distribution in insulator. The equivalent network including modal excess capacitance from the basis functions provides accurate electrical characteristics, compared with analytic and EM simulation results.",

author = "Ki, \{Jin Han\} and Madhavan Swaminathan",

year = "2009",

doi = "10.1109/SPI.2009.5089849",

language = "English",

isbn = "9781424444892",

series = "2009 IEEE Workshop on Signal Propagation on Interconnects, SPI '09",

booktitle = "2009 IEEE Workshop on Signal Propagation on Interconnects, SPI '09",

note = "2009 IEEE Workshop on Signal Propagation on Interconnects, SPI '09 ; Conference date: 12-05-2009 Through 15-05-2009",

}

Ki, JH & Swaminathan, M 2009, Polarization mode basis functions for modeling insulator-coated Through-Silicon Via (TSV) interconnections. in 2009 IEEE Workshop on Signal Propagation on Interconnects, SPI '09., 5089849, 2009 IEEE Workshop on Signal Propagation on Interconnects, SPI '09, 2009 IEEE Workshop on Signal Propagation on Interconnects, SPI '09, Strasbourg, France, 12/05/09. https://doi.org/10.1109/SPI.2009.5089849

Polarization mode basis functions for modeling insulator-coated Through-Silicon Via (TSV) interconnections. / Ki, Jin Han; Swaminathan, Madhavan.
2009 IEEE Workshop on Signal Propagation on Interconnects, SPI '09. 2009. 5089849 (2009 IEEE Workshop on Signal Propagation on Interconnects, SPI '09).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Polarization mode basis functions for modeling insulator-coated Through-Silicon Via (TSV) interconnections

AU - Ki, Jin Han

AU - Swaminathan, Madhavan

PY - 2009

Y1 - 2009

N2 - For the design of high-density 3-D integration, this paper presents a method to model through-silicon via (TSV) interconnections. Focusing on the modeling of annular insulator coating around the TSV, this paper proposes a new type of modal basis functions that describe polarization current density distribution in insulator. The equivalent network including modal excess capacitance from the basis functions provides accurate electrical characteristics, compared with analytic and EM simulation results.

AB - For the design of high-density 3-D integration, this paper presents a method to model through-silicon via (TSV) interconnections. Focusing on the modeling of annular insulator coating around the TSV, this paper proposes a new type of modal basis functions that describe polarization current density distribution in insulator. The equivalent network including modal excess capacitance from the basis functions provides accurate electrical characteristics, compared with analytic and EM simulation results.

UR - https://www.scopus.com/pages/publications/70349977622

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DO - 10.1109/SPI.2009.5089849

M3 - Conference contribution

AN - SCOPUS:70349977622

SN - 9781424444892

T3 - 2009 IEEE Workshop on Signal Propagation on Interconnects, SPI '09

BT - 2009 IEEE Workshop on Signal Propagation on Interconnects, SPI '09

T2 - 2009 IEEE Workshop on Signal Propagation on Interconnects, SPI '09

Y2 - 12 May 2009 through 15 May 2009

ER -

Polarization mode basis functions for modeling insulator-coated Through-Silicon Via (TSV) interconnections

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