Abstract
In this paper, the characteristics of polycrystalline silicon thin-film transistors (poly-Si TFTs) fabricated on flexible substrates are investigated. The a-Si precursor films were deposited by using a rf-magnetron sputtering system with argon-helium mixture gas to minimize the argon incorporation into the Si film. The a-Si films were then laser annealed by using a XeCl excimer laser and a four-mask-processed poly-Si TFT was fabricated with fully self-aligned top gate structure. The fabricated pMOS TFT showed field-effect mobility of 63.6 cm 2/V·s, on/off ratio of 10 5, and threshold voltage of - 1.5 V.
Original language | English |
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Pages (from-to) | S14-S17 |
Journal | Journal of the Korean Physical Society |
Volume | 48 |
Issue number | SUPPL. 1 |
State | Published - Jan 2006 |
Keywords
- Excimer laser
- Flexible
- Poly-Si
- Sputter