Poly-Si TFTs fabricated on flexible substrates by using sputter deposited a-Si films

Yong Hoon Kim, Won Keun Kim, Jeong In Han, Dae Gyu Moon

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

In this paper, the characteristics of polycrystalline silicon thin-film transistors (poly-Si TFTs) fabricated on flexible substrates are investigated. The a-Si precursor films were deposited by using a rf-magnetron sputtering system with argon-helium mixture gas to minimize the argon incorporation into the Si film. The a-Si films were then laser annealed by using a XeCl excimer laser and a four-mask-processed poly-Si TFT was fabricated with fully self-aligned top gate structure. The fabricated pMOS TFT showed field-effect mobility of 63.6 cm 2/V·s, on/off ratio of 10 5, and threshold voltage of - 1.5 V.

Original languageEnglish
Pages (from-to)S14-S17
JournalJournal of the Korean Physical Society
Volume48
Issue numberSUPPL. 1
StatePublished - Jan 2006

Keywords

  • Excimer laser
  • Flexible
  • Poly-Si
  • Sputter

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