Polycrystalline p-β-FeSi2(Al) on n-Si(100): Heterojunction thin-film solar cells

A. Bag; S. Mallik; C. Mahata; C. K. Maiti

doi:10.1109/SMElec.2012.6417142

Polycrystalline p-β-FeSi₂(Al) on n-Si(100): Heterojunction thin-film solar cells

A. Bag
, S. Mallik
, C. Mahata
, C. K. Maiti

Department of Electronics & Electrical Engineering

Indian Institute of Technology Kharagpur

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

Photovoltaic properties of solar cells based on aluminum (Al) alloyed polycrystalline p-type β-phase iron disilicide [p-β-FeSi ₂(Al)]/n-type Si(100) bi-layer heterojunctions are reported. Current density-voltage and photo response characteristics were measured at room temperature. Short circuit current density of ∼26 mA/cm² and open-circuit voltage of ∼335 mV were obtained for p-β-FeSi ₂(Al)/p⁺-Si/n-Si(100) cells with indium-tin-oxide (ITO) as top electrode. Under air mass (AM) 1.5 illumination, the cell showed a conversion efficiency of 3.0%. The device showed a series resistance of 103.95, a high shunt resistance of 761, and an ideality factor of 1.135, resulting in a fill factor of 34.4%.

Original language	English
Title of host publication	2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Proceedings
Pages	285-287
Number of pages	3
DOIs	https://doi.org/10.1109/SMElec.2012.6417142
State	Published - 2012
Event	2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Kuala Lumpur, Malaysia Duration: 19 Sep 2012 → 21 Sep 2012

Publication series

Name	2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Proceedings

Conference

Conference	2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012
Country/Territory	Malaysia
City	Kuala Lumpur
Period	19/09/12 → 21/09/12

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Access to Document

10.1109/SMElec.2012.6417142

Cite this

Bag, A., Mallik, S., Mahata, C., & Maiti, C. K. (2012). Polycrystalline p-β-FeSi₂(Al) on n-Si(100): Heterojunction thin-film solar cells. In 2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Proceedings (pp. 285-287). Article 6417142 (2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Proceedings). https://doi.org/10.1109/SMElec.2012.6417142

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title = "Polycrystalline p-β-FeSi2(Al) on n-Si(100): Heterojunction thin-film solar cells",

abstract = "Photovoltaic properties of solar cells based on aluminum (Al) alloyed polycrystalline p-type β-phase iron disilicide [p-β-FeSi 2(Al)]/n-type Si(100) bi-layer heterojunctions are reported. Current density-voltage and photo response characteristics were measured at room temperature. Short circuit current density of ∼26 mA/cm2 and open-circuit voltage of ∼335 mV were obtained for p-β-FeSi 2(Al)/p+-Si/n-Si(100) cells with indium-tin-oxide (ITO) as top electrode. Under air mass (AM) 1.5 illumination, the cell showed a conversion efficiency of 3.0\%. The device showed a series resistance of 103.95, a high shunt resistance of 761, and an ideality factor of 1.135, resulting in a fill factor of 34.4\%.",

author = "A. Bag and S. Mallik and C. Mahata and Maiti, \{C. K.\}",

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note = "2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 ; Conference date: 19-09-2012 Through 21-09-2012",

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Bag, A, Mallik, S, Mahata, C & Maiti, CK 2012, Polycrystalline p-β-FeSi₂(Al) on n-Si(100): Heterojunction thin-film solar cells. in 2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Proceedings., 6417142, 2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Proceedings, pp. 285-287, 2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012, Kuala Lumpur, Malaysia, 19/09/12. https://doi.org/10.1109/SMElec.2012.6417142

Polycrystalline p-β-FeSi₂(Al) on n-Si(100): Heterojunction thin-film solar cells. / Bag, A.; Mallik, S.; Mahata, C. et al.
2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Proceedings. 2012. p. 285-287 6417142 (2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Mallik, S.

AU - Mahata, C.

AU - Maiti, C. K.

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N2 - Photovoltaic properties of solar cells based on aluminum (Al) alloyed polycrystalline p-type β-phase iron disilicide [p-β-FeSi 2(Al)]/n-type Si(100) bi-layer heterojunctions are reported. Current density-voltage and photo response characteristics were measured at room temperature. Short circuit current density of ∼26 mA/cm2 and open-circuit voltage of ∼335 mV were obtained for p-β-FeSi 2(Al)/p+-Si/n-Si(100) cells with indium-tin-oxide (ITO) as top electrode. Under air mass (AM) 1.5 illumination, the cell showed a conversion efficiency of 3.0%. The device showed a series resistance of 103.95, a high shunt resistance of 761, and an ideality factor of 1.135, resulting in a fill factor of 34.4%.

AB - Photovoltaic properties of solar cells based on aluminum (Al) alloyed polycrystalline p-type β-phase iron disilicide [p-β-FeSi 2(Al)]/n-type Si(100) bi-layer heterojunctions are reported. Current density-voltage and photo response characteristics were measured at room temperature. Short circuit current density of ∼26 mA/cm2 and open-circuit voltage of ∼335 mV were obtained for p-β-FeSi 2(Al)/p+-Si/n-Si(100) cells with indium-tin-oxide (ITO) as top electrode. Under air mass (AM) 1.5 illumination, the cell showed a conversion efficiency of 3.0%. The device showed a series resistance of 103.95, a high shunt resistance of 761, and an ideality factor of 1.135, resulting in a fill factor of 34.4%.

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Bag A, Mallik S, Mahata C, Maiti CK. Polycrystalline p-β-FeSi₂(Al) on n-Si(100): Heterojunction thin-film solar cells. In 2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Proceedings. 2012. p. 285-287. 6417142. (2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Proceedings). doi: 10.1109/SMElec.2012.6417142