Abstract
It has been demonstrated that atomic hydrogen drifts as a charged state in p-type InP and the presence of a high-electric field strongly affects the dissociation of the hydrogen-acceptor complex. During reverse-bias anneal experiments on the n+-p diode, it is confirmed that a charged hydrogen is accelerated out the high-field region below the breakdown voltage. The dissociation frequencies dependent on the applied bias voltage increase from 5.6×10-6 to 2.3×10-5 s-1 at 150°C as the bias voltage is increased from 3 to 9 V. The dissociation energies calculated from the first-order kinetics are in the ranges of 1.58-1.40 eV, at 3-7 V annealing. It is proposed that atomic hydrogen in Zn-doped p-type InP exposed to the plasma hydrogen could be positively charged and strongly passivates the charged Zn acceptor, and also the hydrogen of the hydrogen-Zn acceptor complex can be released with the help of minority carriers or/and the loss of the charged hydrogen atom by the electric field.
Original language | English |
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Pages (from-to) | 1558-1560 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 63 |
Issue number | 11 |
DOIs | |
State | Published - 1993 |