Possible ohmic mechanisms of Ag/indium tin oxide p-type contacts for high-brightness GaN -Based light emitting diodes

June O. Song; Hyun Gi Hong; Joon Woo Jeon; Jung Inn Sohn; Ja Soon Jang; Tae Yeon Seong

doi:10.1149/1.2819536

Possible ohmic mechanisms of Ag/indium tin oxide p-type contacts for high-brightness GaN -Based light emitting diodes

June O. Song
, Hyun Gi Hong
, Joon Woo Jeon
, Jung Inn Sohn
, Ja Soon Jang
, Tae Yeon Seong

Department of Physics

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

We have investigated the Ag (1 nm)indium tin oxide (ITO) (200 nm) contacts by scanning transmission electron microscopy (STEM), Auger electron spectroscopy (AES), and X-ray photoemission spectroscopy (XPS) to understand its ohmic mechanism. The Ag/ITO contacts exhibit ohmic behaviors, when annealed at 400-600°C. The effective Schottky barrier heights depend on the annealing temperatures. STEM and AES results reveal the formation of Ag nanodots (5-35 nm across) and Ga-Ag solid solution. Based on the STEM, AES, and XPS results, the ohmic contact formation is described in terms of the formation of the Ga-Ag solid solution and the inhomogeneous interfaces with nanodots.

Original language	English
Pages (from-to)	H36-H38
Journal	Electrochemical and Solid-State Letters
Volume	11
Issue number	2
DOIs	https://doi.org/10.1149/1.2819536
State	Published - 2008

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@article{7f3a2bda0ef1429fb1642a1d92a3ebaf,

title = "Possible ohmic mechanisms of Ag/indium tin oxide p-type contacts for high-brightness GaN -Based light emitting diodes",

abstract = "We have investigated the Ag (1 nm)indium tin oxide (ITO) (200 nm) contacts by scanning transmission electron microscopy (STEM), Auger electron spectroscopy (AES), and X-ray photoemission spectroscopy (XPS) to understand its ohmic mechanism. The Ag/ITO contacts exhibit ohmic behaviors, when annealed at 400-600°C. The effective Schottky barrier heights depend on the annealing temperatures. STEM and AES results reveal the formation of Ag nanodots (5-35 nm across) and Ga-Ag solid solution. Based on the STEM, AES, and XPS results, the ohmic contact formation is described in terms of the formation of the Ga-Ag solid solution and the inhomogeneous interfaces with nanodots.",

author = "Song, \{June O.\} and Hong, \{Hyun Gi\} and Jeon, \{Joon Woo\} and Sohn, \{Jung Inn\} and Jang, \{Ja Soon\} and Seong, \{Tae Yeon\}",

year = "2008",

doi = "10.1149/1.2819536",

language = "English",

volume = "11",

pages = "H36--H38",

journal = "Electrochemical and Solid-State Letters",

issn = "1099-0062",

publisher = "Electrochemical Society Inc.",

number = "2",

}

TY - JOUR

T1 - Possible ohmic mechanisms of Ag/indium tin oxide p-type contacts for high-brightness GaN -Based light emitting diodes

AU - Song, June O.

AU - Hong, Hyun Gi

AU - Jeon, Joon Woo

AU - Sohn, Jung Inn

AU - Jang, Ja Soon

AU - Seong, Tae Yeon

PY - 2008

Y1 - 2008

N2 - We have investigated the Ag (1 nm)indium tin oxide (ITO) (200 nm) contacts by scanning transmission electron microscopy (STEM), Auger electron spectroscopy (AES), and X-ray photoemission spectroscopy (XPS) to understand its ohmic mechanism. The Ag/ITO contacts exhibit ohmic behaviors, when annealed at 400-600°C. The effective Schottky barrier heights depend on the annealing temperatures. STEM and AES results reveal the formation of Ag nanodots (5-35 nm across) and Ga-Ag solid solution. Based on the STEM, AES, and XPS results, the ohmic contact formation is described in terms of the formation of the Ga-Ag solid solution and the inhomogeneous interfaces with nanodots.

AB - We have investigated the Ag (1 nm)indium tin oxide (ITO) (200 nm) contacts by scanning transmission electron microscopy (STEM), Auger electron spectroscopy (AES), and X-ray photoemission spectroscopy (XPS) to understand its ohmic mechanism. The Ag/ITO contacts exhibit ohmic behaviors, when annealed at 400-600°C. The effective Schottky barrier heights depend on the annealing temperatures. STEM and AES results reveal the formation of Ag nanodots (5-35 nm across) and Ga-Ag solid solution. Based on the STEM, AES, and XPS results, the ohmic contact formation is described in terms of the formation of the Ga-Ag solid solution and the inhomogeneous interfaces with nanodots.

UR - https://www.scopus.com/pages/publications/37549023374

U2 - 10.1149/1.2819536

DO - 10.1149/1.2819536

M3 - Article

AN - SCOPUS:37549023374

SN - 1099-0062

VL - 11

SP - H36-H38

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 2

ER -

Possible ohmic mechanisms of Ag/indium tin oxide p-type contacts for high-brightness GaN -Based light emitting diodes

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