Abstract
High performance top-gate single walled carbon nanotube network transistors are fabricated with aluminum oxide (Al 2O 3) layer as a gate dielectric by atomic layer deposition. It exhibits large on/off ratio (>10 4) due to selective growth of semiconducting tubes by the plasma enhanced chemical vapor deposition. I-V characteristics show p-type or n-type depending on the deposition temperature. We investigate the type dependent characteristics for the carrier polarities with the post annealing effect on the top-gate SWNT network transistors. The dramatic change in the polarity of the top-gate SWNT network transistors, from n-type to p-type due to conversion of I-V characteristics is observed by post-annealing at 350 .5 C for 30 minutes under vacuum. Our observation suggests that competition between electron transfer from the Al 2O 3 layers to the SWNT surface and electron capture by oxygen molecules adsorbed on the tube walls seems to be the key point for the V th change as a function of Al 2O 3 deposition temperature.
Original language | English |
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Pages (from-to) | 5955-5958 |
Number of pages | 4 |
Journal | Journal of Nanoscience and Nanotechnology |
Volume | 11 |
Issue number | 7 |
DOIs | |
State | Published - Jul 2011 |
Keywords
- Aluminum Oxide
- Atomic Layer Deposition
- Carbon Nanotube
- Dielectric
- Network
- Transistor