Post annealing effect on the electrical properties of top-gate SWNT network transistors

Un Jeong Kim, D. Y. Suh, S. C. Min, Wanjun Park

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

High performance top-gate single walled carbon nanotube network transistors are fabricated with aluminum oxide (Al 2O 3) layer as a gate dielectric by atomic layer deposition. It exhibits large on/off ratio (>10 4) due to selective growth of semiconducting tubes by the plasma enhanced chemical vapor deposition. I-V characteristics show p-type or n-type depending on the deposition temperature. We investigate the type dependent characteristics for the carrier polarities with the post annealing effect on the top-gate SWNT network transistors. The dramatic change in the polarity of the top-gate SWNT network transistors, from n-type to p-type due to conversion of I-V characteristics is observed by post-annealing at 350 .5 C for 30 minutes under vacuum. Our observation suggests that competition between electron transfer from the Al 2O 3 layers to the SWNT surface and electron capture by oxygen molecules adsorbed on the tube walls seems to be the key point for the V th change as a function of Al 2O 3 deposition temperature.

Original languageEnglish
Pages (from-to)5955-5958
Number of pages4
JournalJournal of Nanoscience and Nanotechnology
Volume11
Issue number7
DOIs
StatePublished - Jul 2011

Keywords

  • Aluminum Oxide
  • Atomic Layer Deposition
  • Carbon Nanotube
  • Dielectric
  • Network
  • Transistor

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