@inproceedings{f776d8ada26b42e18a6c1c8edb9d4c84,
title = "Post-treatment effect on the electrical properties of triisopropylsilyl pentacene organic thin-film transistors",
abstract = "By employing a post-treatment in N2 atmosphere at room temperature, the electrical properties of ink-jet printed triisopropylsilyl pentacene organic thin-film transistors (OTFTs) such as current on/off ratio and subthreshold slope were significantly improved. The current on/off ratio of the OTFT device increased from 104 to 105 after the post-treatment and the subthreshold slope was improved from 8.5 V/decade to 2 V/decade. The field-effect mobility of the device was not significantly affected by the post-treatment. We have also employed a post-treatment in vacuum at room temperature and the off-current of OTFT devices decreased by 1 order after the treatment.",
keywords = "Ink-jet printing, Organic thin-film transistor, Post-treatment, Triisopropylsilyl pentacene",
author = "Kim, {Yong Hoon} and Lee, {Jae Hoon} and Han, {Min Koo} and Han, {Jeong In}",
year = "2007",
language = "English",
isbn = "9787561752289",
series = "AD'07 - Proceedings of Asia Display 2007",
pages = "1164--1168",
booktitle = "AD'07 - Proceedings of Asia Display 2007",
note = "Asia Display 2007, AD'07 ; Conference date: 12-03-2007 Through 16-03-2007",
}