@inproceedings{6ea32b0790ed4564b1cbab92ba1e9c18,
title = "Power-law logistic model for the current-time characteristic of metal gate/high-K/III-V semiconductor capacitors",
abstract = "This paper deals with the leakage current variation occurring in Al/HfYOx/GaAs capacitors subjected to constant electrical stress. It is shown that the current-time characteristic of such structures follows a power-law logistic model that arises from an extension of the Curie-von Schweidler law. The proposed model is based on an equivalent electrical circuit representation of the degraded structure in which series and parallel resistances play a fundamental role.",
keywords = "capacitors, elecctrical stress, GaAs, high-K, MOS, reliability",
author = "E. Miranda and C. Mahata and T. Das and Maiti, {C. K.}",
year = "2011",
doi = "10.1109/SCED.2011.5744230",
language = "English",
isbn = "9781424478637",
series = "Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011",
booktitle = "Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011",
note = "8th Spanish Conference on Electron Devices, CDE 2011 ; Conference date: 08-02-2011 Through 11-02-2011",
}