Preparation and characterization of electrosynthesized ZnSeTe thin films

T. Mahalingam, V. Dhanasekaran, Suganthi Devadason, J. P. Chu

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

The zinc seleno telluride (ZnSeTe) thin films were deposited on conducting glass substrates by electroplating. Cyclic voltammetry curves were recorded to analyze the electrochemical kinetics for the grown of ZnSeTe alloys. X-ray diffraction patterns were revealed that the polycrystalline wurtzite structure of ZnSeTe thin films. The morphological studies depicted that the ellipsoidal shaped grains were distributed evenly over the entire surface of the film. The average grain size is estimated about 150 nm. The optical transmission and reflection spectrum of the deposited films were recorded in the wave length range 200 to 1200 nm. The band gap value estimated using conventional method and found to be 1.98 eV at optimized deposition parameter.

Original languageEnglish
Title of host publicationIndustrial Electrochemistry and Electrochemical Engineering (General) - 221st ECS Meeting
PublisherElectrochemical Society Inc.
Pages19-24
Number of pages6
Edition9
ISBN (Electronic)9781623320157
ISBN (Print)9781623320157
DOIs
StatePublished - 2012
EventSymposium on Industrial Electrochemistry and Electrochemical Engineering General Session - 221st ECS Meeting - Seattle, WA, United States
Duration: 6 May 201210 May 2012

Publication series

NameECS Transactions
Number9
Volume45
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferenceSymposium on Industrial Electrochemistry and Electrochemical Engineering General Session - 221st ECS Meeting
Country/TerritoryUnited States
CitySeattle, WA
Period6/05/1210/05/12

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