TY - GEN
T1 - Printable indium oxide thin-film transistor
AU - Kim, Ji Won
AU - Lee, Jong Keun
AU - Kim, Young Woong
AU - Hong, Sung Kyu
AU - Noh, Yong Young
AU - Kim, Young Soon
PY - 2010
Y1 - 2010
N2 - Recently, the oxide semiconductor, which is possible to substitute for Si-based devices, has been studied for their advantages such as transparent, high carrier mobility and low cost. In many processes it was reported to make the oxide semiconductor. Besides, we tried the solution process for high productivity and used In203 to active layer of TFTs by sol-gel reaction. As a result, we obtained the advantages i.e. efficiency of the productivity, processing time and low cost. The performance of TFTs by solution process shows 0.02 cm2/Vs field effect mobility and 106 Ion/I off ratio.
AB - Recently, the oxide semiconductor, which is possible to substitute for Si-based devices, has been studied for their advantages such as transparent, high carrier mobility and low cost. In many processes it was reported to make the oxide semiconductor. Besides, we tried the solution process for high productivity and used In203 to active layer of TFTs by sol-gel reaction. As a result, we obtained the advantages i.e. efficiency of the productivity, processing time and low cost. The performance of TFTs by solution process shows 0.02 cm2/Vs field effect mobility and 106 Ion/I off ratio.
UR - http://www.scopus.com/inward/record.url?scp=79955739853&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:79955739853
SN - 9780892082933
T3 - International Conference on Digital Printing Technologies
SP - 737
EP - 739
BT - NIP26
T2 - 26th International Conference on Digital Printing Technologies, NIP26 and 6th International Conference on Digital Fabrication 2010, DF 2010
Y2 - 19 September 2010 through 23 September 2010
ER -