Printable indium oxide thin-film transistor

Ji Won Kim, Jong Keun Lee, Young Woong Kim, Sung Kyu Hong, Yong Young Noh, Young Soon Kim

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Recently, the oxide semiconductor, which is possible to substitute for Si-based devices, has been studied for their advantages such as transparent, high carrier mobility and low cost. In many processes it was reported to make the oxide semiconductor. Besides, we tried the solution process for high productivity and used In203 to active layer of TFTs by sol-gel reaction. As a result, we obtained the advantages i.e. efficiency of the productivity, processing time and low cost. The performance of TFTs by solution process shows 0.02 cm2/Vs field effect mobility and 106 Ion/I off ratio.

Original languageEnglish
Title of host publicationNIP26
Subtitle of host publication26th International Conference on Digital Printing Technologies and Digital Fabrication 2010, DF 2010 - Technical Programs and Proceedings
Pages737-739
Number of pages3
StatePublished - 2010
Event26th International Conference on Digital Printing Technologies, NIP26 and 6th International Conference on Digital Fabrication 2010, DF 2010 - Austin, TX, United States
Duration: 19 Sep 201023 Sep 2010

Publication series

NameInternational Conference on Digital Printing Technologies

Conference

Conference26th International Conference on Digital Printing Technologies, NIP26 and 6th International Conference on Digital Fabrication 2010, DF 2010
Country/TerritoryUnited States
CityAustin, TX
Period19/09/1023/09/10

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