Abstract
Intersubband Quantum-Box (IQB) lasers; that is, devices consisting of 2-D arrays of ministacks (i.e., 2-4 stages) intersubband QB emitters are proposed, as an alternative to 30-stage quantum-cascade (QC) devices, as sources for efficient room-temperature (RT) emission in the mid-infrared (4-6 μm) wavelength range. Preliminary results include: 1) the design of devices for operation with 50% wallplug efficiency at RT; 2) realization of a novel type of QC device: the deep-well (DW) QC laser, that has demonstrated at λ =4.7μm low temperature sensitivity of the threshold current, a clear indication of suppressed carrier leakage; 3) the formation of 2-D arrays at nanopoles by employing nanopatterning and dry etching; 4) the formation of 40nm-diameter, one-stage IQB structures on 100nm centers by preferential regrowth via metal-organic vapor phase epitaxy (MOVPE).
Original language | English |
---|---|
Article number | 031606 |
Journal | Journal of Nanophotonics |
Volume | 3 |
Issue number | 1 |
DOIs | |
State | Published - 2009 |
Keywords
- Intersubband-transition semiconductor laser
- phonon bottleneck
- quantum boxes