Properties of reactive-sputtered Ti1-x AlxN films for complementary metal-oxide-semiconductor silicon storage node electrode diffusion barriers

Sam Dong Kim, Jin Koo Rhee, Hyung Moo Park

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

The effects of process variables on the sputtered Ti1-xAlxN film properties were studied. Conventional TiN barriers demonstrated complete oxidation of both barriers and TiSi2 films after postannealing. The TiAlN barriers deposited at the optimized process condition were oxidized partially at the top surfaces and gave rise to excellent oxidation stability of the bottom electrode structures.

Original languageEnglish
Pages (from-to)848-857
Number of pages10
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume21
Issue number2
StatePublished - Mar 2003

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