Abstract
The effects of process variables on the sputtered Ti1-xAlxN film properties were studied. Conventional TiN barriers demonstrated complete oxidation of both barriers and TiSi2 films after postannealing. The TiAlN barriers deposited at the optimized process condition were oxidized partially at the top surfaces and gave rise to excellent oxidation stability of the bottom electrode structures.
Original language | English |
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Pages (from-to) | 848-857 |
Number of pages | 10 |
Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
Volume | 21 |
Issue number | 2 |
State | Published - Mar 2003 |