Purge-time-dependent growth of ZnO thin films by atomic layer deposition

The effects of the purge time of diethylzinc and deionized water (H ₂O) on the structural, electrical, and optical properties of zinc oxide thin films grown by atomic layer deposition were investigated. The exceptionally long purge time of H₂O greater than 60 s led to changes in the growth per cycle, electrical conductivity, preferred orientation, and defect state of the grown zinc oxide films, while the purge time of diethylzinc had a negligible effect. These changes were due to the partial loss of surface hydroxyl groups during the long H₂O purge step.