Quantitative analysis of defect states in InGaZnO within 2 eV below the conduction band via photo-induced current transient spectroscopy

Hyunmin Hong, Min Jung Kim, Dong Joon Yi, Yeon Keon Moon, Kyoung Seok Son, Jun Hyung Lim, Kwang Sik Jeong, Kwun Bum Chung

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