Quantitative analysis on the effects of AlAs X states on Γ resonance in a GaAsAlAs double barrier structure under elevated hydrostatic pressures

Yongmin Kim; Kyooho Jung; Hyunsik Im; P. C. Klipstein; R. Grey; G. Hill

doi:10.1063/1.2012536

Quantitative analysis on the effects of AlAs X states on Γ resonance in a GaAsAlAs double barrier structure under elevated hydrostatic pressures

Yongmin Kim, Kyooho Jung, Hyunsik Im, P. C. Klipstein, R. Grey, G. Hill

Division of System Semiconductor

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

We have investigated Γ -symmetry resonant tunneling in a GaAsAlAs "double barrier structure" with 20 Å thick AlAs barriers as a function of hydrostatic pressure. A quantitative analysis based on transfer matrix and self-consistent Schrödinger-Poisson calculations is performed to understand the effects of charge accumulation in each layer on the resonance bias and the resonance peak/valley currents, yielding the value of the longitudinal mass (mz*) at the band edge of 20 Å thick AlAs, mz* = (0.35±0.05) m0.

Original language	English
Article number	072106
Journal	Applied Physics Letters
Volume	87
Issue number	7
DOIs	https://doi.org/10.1063/1.2012536
State	Published - 15 Aug 2005

Access to Document

10.1063/1.2012536

Cite this

@article{ed75f7d7ef234a32b08d5bd626960002,

title = "Quantitative analysis on the effects of AlAs X states on Γ resonance in a GaAsAlAs double barrier structure under elevated hydrostatic pressures",

abstract = "We have investigated Γ -symmetry resonant tunneling in a GaAsAlAs {"}double barrier structure{"} with 20 {\AA} thick AlAs barriers as a function of hydrostatic pressure. A quantitative analysis based on transfer matrix and self-consistent Schr{\"o}dinger-Poisson calculations is performed to understand the effects of charge accumulation in each layer on the resonance bias and the resonance peak/valley currents, yielding the value of the longitudinal mass (mz*) at the band edge of 20 {\AA} thick AlAs, mz* = (0.35±0.05) m0.",

author = "Yongmin Kim and Kyooho Jung and Hyunsik Im and Klipstein, {P. C.} and R. Grey and G. Hill",

year = "2005",

month = aug,

day = "15",

doi = "10.1063/1.2012536",

language = "English",

volume = "87",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "7",

}

TY - JOUR

T1 - Quantitative analysis on the effects of AlAs X states on Γ resonance in a GaAsAlAs double barrier structure under elevated hydrostatic pressures

AU - Kim, Yongmin

AU - Jung, Kyooho

AU - Im, Hyunsik

AU - Klipstein, P. C.

AU - Grey, R.

AU - Hill, G.

PY - 2005/8/15

Y1 - 2005/8/15

N2 - We have investigated Γ -symmetry resonant tunneling in a GaAsAlAs "double barrier structure" with 20 Å thick AlAs barriers as a function of hydrostatic pressure. A quantitative analysis based on transfer matrix and self-consistent Schrödinger-Poisson calculations is performed to understand the effects of charge accumulation in each layer on the resonance bias and the resonance peak/valley currents, yielding the value of the longitudinal mass (mz*) at the band edge of 20 Å thick AlAs, mz* = (0.35±0.05) m0.

AB - We have investigated Γ -symmetry resonant tunneling in a GaAsAlAs "double barrier structure" with 20 Å thick AlAs barriers as a function of hydrostatic pressure. A quantitative analysis based on transfer matrix and self-consistent Schrödinger-Poisson calculations is performed to understand the effects of charge accumulation in each layer on the resonance bias and the resonance peak/valley currents, yielding the value of the longitudinal mass (mz*) at the band edge of 20 Å thick AlAs, mz* = (0.35±0.05) m0.

UR - http://www.scopus.com/inward/record.url?scp=24144439323&partnerID=8YFLogxK

U2 - 10.1063/1.2012536

DO - 10.1063/1.2012536

M3 - Article

AN - SCOPUS:24144439323

SN - 0003-6951

VL - 87

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

M1 - 072106

ER -

Quantitative analysis on the effects of AlAs X states on Γ resonance in a GaAsAlAs double barrier structure under elevated hydrostatic pressures

Abstract

Access to Document

Other files and links

Fingerprint

Cite this