Quantum Dots (QDs) immobilization on metal nanowire end-facets for single photon source application

J. Kim, B. C. Lee, C. Kang, S. Y. Lee, J. H. Park, H. J. Shin

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We introduce a fabrication process to immobilize cadmium selenide (CdSe) Quantum Dots (QDs) on end-facets of metal nanowires, which can be possibly used as a cavity-free unidirectional single photon source with high coupling efficiency due to high Purcell factor. Nanowires were fabricated using E-beam lithography, E-beam evaporation, and lift-off process and finally covered with chemically deposited silicon dioxide (SiO2) layer. End-facets of metal nanowires were defined using wet etching process. QD immobilization was accomplished through surface modifications on both metal and QD surfaces. We immobilized thiol (-SH) functionalized 15 base pair (bp) ssDNA on Au nanowire surface to hybridize with its complimentary amine (-NH3) functionalized 15bp ssDNA and conjugated the amine functionalized 15bp ssDNA with QD. Presenting QD immobilization method showed high selectivity between metal nanowire and SiO2 surfaces.

Original languageEnglish
Title of host publicationAdvanced Fabrication Technologies for Micro/Nano Optics and Photonics III
DOIs
StatePublished - 2010
EventAdvanced Fabrication Technologies for Micro/Nano Optics and Photonics III - San Francisco, CA, United States
Duration: 25 Jan 201027 Jan 2010

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume7591
ISSN (Print)0277-786X

Conference

ConferenceAdvanced Fabrication Technologies for Micro/Nano Optics and Photonics III
Country/TerritoryUnited States
CitySan Francisco, CA
Period25/01/1027/01/10

Keywords

  • Metal nanowire
  • Quantum dot
  • Single photon source
  • Surface plasmon resonance

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