@inproceedings{d9f5effae7bc480aa782e364aeaa1cd0,
title = "Raman scattering of self-assembled gallium nitride nanorods synthesized by plasma-assisted molecular beam epitaxy",
abstract = "Raman scattering experiment was carried out to study material and electronic properties of the aligned GaN nanorods grown by plasma-assisted molecular beam epitaxy. Due to the small size of the nanorods and the relatively high power density of the laser illumination used in this investigation, local heating of the sample cannot be neglected. Special care has been taken to identify the frequency shift in the optical phonon peaks induced by local heating prior to any spectral analysis. The residual stress in the GaN nanorods was estimated by analyzing the frequency shift of its E 2 Raman mode. It was found that the frequency of E 2 mode is shifted by only 0.1 cm -1 comparing with the stress-free frequency, indicating a negligible residual stress in nanorods. Owing to aligned geometry of the nanorods and the back-scattering scattering geometry used in the experiment, A 1(LO) Raman mode was collected. The free carrier concentration as well as electron mobility of the GaN nanorods were obtained by the line shape analysis of the coupled A 1(LO) phonon-plasmon mode. The electron concentration and mobility of electron obtained from line shape analysis are 3.3×10 17 cm -3 and 140 cm 2/Vs, respectively. We presented a general method of better determining the electronic parameters of the GaN nanostructures via Raman scattering.",
author = "D. Wang and Tin, {C. C.} and Williams, {J. R.} and M. Park and Park, {Y. S.} and Park, {C. M.} and Kang, {T. W.} and Yang, {W. C.}",
year = "2006",
language = "English",
isbn = "1558998462",
series = "Materials Research Society Symposium Proceedings",
pages = "215--220",
booktitle = "Materials Research Society Symposium Proceedings",
note = "2005 Materials Research Society Fall Meeting ; Conference date: 28-11-2005 Through 02-12-2005",
}