Rapid thermal process for enhancement of collimated titanium nitride barriers

Sam Dong Kim; Sung Gon Jin; Mi Ran Hong; Chung Tae Kim

doi:10.1149/1.1837464

Rapid thermal process for enhancement of collimated titanium nitride barriers

Sam Dong Kim, Sung Gon Jin, Mi Ran Hong, Chung Tae Kim

Department of Electronics & Electrical Engineering

SK Corporation

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

A rapid thermal processing (RTP) method to improve the barrier properties of collimated titanium nitride (TiN) was studied. The RTP for the collimated TiN shows a significantly improved diffusion barrier property with reduced electrical contact resistance compared to a conventional furnace annealing process. Aluminum planarization was performed on subhalf micron contacts with various TiN barrier processes to examine electrical properties. When RTP is used, collimated TiN of much smaller thickness than the furnace-annealed collimated TiN shows reliable electrical contact properties without junction leakage failure at subhalf micron contacts. When simultaneous in situ RTP for Ti silicidation and stuffing is performed, we obtain greatly improved p⁺ contact resistance. This is due to the phase transformation of Ti-Si amorphous layer to crystalline TiSi₂ at Si/barrier interface, as observed by cross-sectional transmission electron microscope.

Original language	English
Pages (from-to)	664-669
Number of pages	6
Journal	Journal of the Electrochemical Society
Volume	144
Issue number	2
DOIs	https://doi.org/10.1149/1.1837464
State	Published - Feb 1997

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title = "Rapid thermal process for enhancement of collimated titanium nitride barriers",

abstract = "A rapid thermal processing (RTP) method to improve the barrier properties of collimated titanium nitride (TiN) was studied. The RTP for the collimated TiN shows a significantly improved diffusion barrier property with reduced electrical contact resistance compared to a conventional furnace annealing process. Aluminum planarization was performed on subhalf micron contacts with various TiN barrier processes to examine electrical properties. When RTP is used, collimated TiN of much smaller thickness than the furnace-annealed collimated TiN shows reliable electrical contact properties without junction leakage failure at subhalf micron contacts. When simultaneous in situ RTP for Ti silicidation and stuffing is performed, we obtain greatly improved p+ contact resistance. This is due to the phase transformation of Ti-Si amorphous layer to crystalline TiSi2 at Si/barrier interface, as observed by cross-sectional transmission electron microscope.",

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AU - Kim, Sam Dong

AU - Jin, Sung Gon

AU - Hong, Mi Ran

AU - Kim, Chung Tae

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N2 - A rapid thermal processing (RTP) method to improve the barrier properties of collimated titanium nitride (TiN) was studied. The RTP for the collimated TiN shows a significantly improved diffusion barrier property with reduced electrical contact resistance compared to a conventional furnace annealing process. Aluminum planarization was performed on subhalf micron contacts with various TiN barrier processes to examine electrical properties. When RTP is used, collimated TiN of much smaller thickness than the furnace-annealed collimated TiN shows reliable electrical contact properties without junction leakage failure at subhalf micron contacts. When simultaneous in situ RTP for Ti silicidation and stuffing is performed, we obtain greatly improved p+ contact resistance. This is due to the phase transformation of Ti-Si amorphous layer to crystalline TiSi2 at Si/barrier interface, as observed by cross-sectional transmission electron microscope.

AB - A rapid thermal processing (RTP) method to improve the barrier properties of collimated titanium nitride (TiN) was studied. The RTP for the collimated TiN shows a significantly improved diffusion barrier property with reduced electrical contact resistance compared to a conventional furnace annealing process. Aluminum planarization was performed on subhalf micron contacts with various TiN barrier processes to examine electrical properties. When RTP is used, collimated TiN of much smaller thickness than the furnace-annealed collimated TiN shows reliable electrical contact properties without junction leakage failure at subhalf micron contacts. When simultaneous in situ RTP for Ti silicidation and stuffing is performed, we obtain greatly improved p+ contact resistance. This is due to the phase transformation of Ti-Si amorphous layer to crystalline TiSi2 at Si/barrier interface, as observed by cross-sectional transmission electron microscope.

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Rapid thermal process for enhancement of collimated titanium nitride barriers

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