TY - JOUR
T1 - Recent Progress in Memrsitor Array Structures and Solutions for Sneak Path Current Reduction
AU - Lee, Yoonseok
AU - Jeon, Beomki
AU - Cho, Youngboo
AU - Kim, Jihyung
AU - Shim, Wonbo
AU - Kim, Sungjun
N1 - Publisher Copyright:
© 2024 Wiley-VCH GmbH.
PY - 2024
Y1 - 2024
N2 - Memristors have diverse potential for improving data storage through linear memory control and synaptic operation in AI and neuromorphic computing. Prior research on optimizing memristors in next-generation devices has generally indicated that emerging arrays and vertical structures can improve memory density, although special fabrication steps are required to realize improved operation. Until now, many obstructions, such as the sneak path current and forming processes from the initial device in array structure operation at the device level, have limited the development of array-based memristor devices for further progressing circuits and integrated design. In this paper, memristor array studies are examined that have suggested solutions for sneak path current and forming operation problems at the device level. Ultimately, representative solutions are proposed to progress memristors into array structures by introducing the latest research on one diode-one RRAM (1D1R), one selector-one RRAM (1S1R), overshoot suppressed RRAM (OSRRAM), self-rectifying cell (SRC), charge trap memory (CTM) and their applications. Additionally, essential details demonstrating the practical implementation of these devices in crossbar array memory are investigated. Finally, the advantages and perspectives of these array-based memristor solutions are summarized.
AB - Memristors have diverse potential for improving data storage through linear memory control and synaptic operation in AI and neuromorphic computing. Prior research on optimizing memristors in next-generation devices has generally indicated that emerging arrays and vertical structures can improve memory density, although special fabrication steps are required to realize improved operation. Until now, many obstructions, such as the sneak path current and forming processes from the initial device in array structure operation at the device level, have limited the development of array-based memristor devices for further progressing circuits and integrated design. In this paper, memristor array studies are examined that have suggested solutions for sneak path current and forming operation problems at the device level. Ultimately, representative solutions are proposed to progress memristors into array structures by introducing the latest research on one diode-one RRAM (1D1R), one selector-one RRAM (1S1R), overshoot suppressed RRAM (OSRRAM), self-rectifying cell (SRC), charge trap memory (CTM) and their applications. Additionally, essential details demonstrating the practical implementation of these devices in crossbar array memory are investigated. Finally, the advantages and perspectives of these array-based memristor solutions are summarized.
KW - 1D1R
KW - 1S1R
KW - charge trap memory
KW - memristor array
KW - neuromorphic computing
KW - overshoot suppressed RRAM
KW - resistive random-access memory
KW - self-rectifying cell
UR - http://www.scopus.com/inward/record.url?scp=85200384628&partnerID=8YFLogxK
U2 - 10.1002/admt.202400585
DO - 10.1002/admt.202400585
M3 - Review article
AN - SCOPUS:85200384628
SN - 2365-709X
JO - Advanced Materials Technologies
JF - Advanced Materials Technologies
ER -