TY - JOUR
T1 - Recent Progress on High-Capacitance Polymer Gate Dielectrics for Flexible Low-Voltage Transistors
AU - Nketia-Yawson, Benjamin
AU - Noh, Yong Young
N1 - Publisher Copyright:
© 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
PY - 2018/10/17
Y1 - 2018/10/17
N2 - The gate dielectric layer is an essential element of field-effect transistors (FETs), large area integrated circuits, and various application electronics. Beyond basic insulation between the semiconductor layer and gate electrode, FET performance largely depends on the capacitance of the chosen insulator layer properties. Recent functional devices developments require new functionalities, such as high mechanical flexibility and stretchability in addition to basic insulating and physical properties. This review focuses on recent developments of high-capacitance polymer gate dielectric materials and their application for low-voltage flexible FETs. The fundamental principles and components of transistors are discussed briefly, then the underlying concepts for gate dielectrics and the mechanisms for polymer dielectric properties, such as capacitance control, leakage current formation in dielectric polymer films, and patternability, are described. Strategic approaches to achieve high capacitance based on low-k dielectric materials, and the development and use of high-capacitance polymers and hybrid polymer gate dielectrics in the context of emerging transistors on flexible substrates are also discussed.
AB - The gate dielectric layer is an essential element of field-effect transistors (FETs), large area integrated circuits, and various application electronics. Beyond basic insulation between the semiconductor layer and gate electrode, FET performance largely depends on the capacitance of the chosen insulator layer properties. Recent functional devices developments require new functionalities, such as high mechanical flexibility and stretchability in addition to basic insulating and physical properties. This review focuses on recent developments of high-capacitance polymer gate dielectric materials and their application for low-voltage flexible FETs. The fundamental principles and components of transistors are discussed briefly, then the underlying concepts for gate dielectrics and the mechanisms for polymer dielectric properties, such as capacitance control, leakage current formation in dielectric polymer films, and patternability, are described. Strategic approaches to achieve high capacitance based on low-k dielectric materials, and the development and use of high-capacitance polymers and hybrid polymer gate dielectrics in the context of emerging transistors on flexible substrates are also discussed.
KW - dielectric constant
KW - flexible transistors
KW - low-voltage transistors
KW - polymer dielectrics
KW - thin-film transistors
UR - http://www.scopus.com/inward/record.url?scp=85052808644&partnerID=8YFLogxK
U2 - 10.1002/adfm.201802201
DO - 10.1002/adfm.201802201
M3 - Review article
AN - SCOPUS:85052808644
SN - 1616-301X
VL - 28
JO - Advanced Functional Materials
JF - Advanced Functional Materials
IS - 42
M1 - 1802201
ER -