@inproceedings{d68aefca496f45439b3d7233dd2f917a,
title = "Record-High Performance Trantenna based on Asymmetric Nano-Ring FET for Polarization-Independent Large-Scale/Real-Time THz Imaging",
abstract = "We demonstrate a record-high performance monolithic trantenna (transistor-antenna) using 65-nm CMOS foundry in the field of a plasmonic terahertz (THz) detector. By applying ultimate structural asymmetry between source and drain on a ring FET with source diameter (dS) scaling from 30 to 0.38 mm, we obtained 180 times more enhanced photoresponse (δu) in on-chip THz measurement. Through free-space THz imaging experiments, the conductive drain region of ring FET itself showed a frequency sensitivity with resonance frequency at 0.12 THz in 0.09∼ 0.2 THz range and polarization-independent imaging results as an isotropic circular antenna. Highlyscalable and feeding line-free monolithic trantenna enables a high-performance THz detector with responsivity of 8.8 kV/W and NEP of 3.36 pW/Hz0.5 at the target frequency.",
author = "Jang, {E. San} and Ryu, {M. W.} and R. Patel and Ahn, {S. H.} and Jeon, {H. J.} and Han, {K. J.} and Kim, {K. R.}",
note = "Publisher Copyright: {\textcopyright} 2019 The Japan Society of Applied Physics.; 39th Symposium on VLSI Technology, VLSI Technology 2019 ; Conference date: 09-06-2019 Through 14-06-2019",
year = "2019",
month = jun,
doi = "10.23919/VLSIT.2019.8776567",
language = "English",
series = "Digest of Technical Papers - Symposium on VLSI Technology",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "T160--T161",
booktitle = "2019 Symposium on VLSI Technology, VLSI Technology 2019 - Digest of Technical Papers",
address = "United States",
}