Relevant correlation between electrical and magnetic properties for p -type InP:Zn implanted with Mn (10 at. %)

Jin Soak Kim; Eun Kyu Kim; Yoon Shon; Sejoon Lee

doi:10.1063/1.3050458

Relevant correlation between electrical and magnetic properties for p -type InP:Zn implanted with Mn (10 at. %)

Jin Soak Kim, Eun Kyu Kim, Yoon Shon, Sejoon Lee

Division of System Semiconductor

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Abstract

A relevant correlation between magnetic properties and Mn-related deep level states for the Mn-implanted p -type InMnP:Zn layers annealed at 400-600 °C was investigated. For the 600 °C -annealed sample, the portion of deep level transient spectroscopy signals corresponding to Mn-related states was observed to significantly increase while that related to charge-trapping centers observed for 400 and 500 °C -annealed samples drastically decreased. The sample showed the improved ferromagnetic properties compared with other samples. These results are considered as originating from the effective incorporation of Mn ions into the InP:Zn host lattice with recovering the crystallinity after thermal annealing.

Original language	English
Article number	242110
Journal	Applied Physics Letters
Volume	93
Issue number	24
DOIs	https://doi.org/10.1063/1.3050458
State	Published - 2008

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abstract = "A relevant correlation between magnetic properties and Mn-related deep level states for the Mn-implanted p -type InMnP:Zn layers annealed at 400-600 °C was investigated. For the 600 °C -annealed sample, the portion of deep level transient spectroscopy signals corresponding to Mn-related states was observed to significantly increase while that related to charge-trapping centers observed for 400 and 500 °C -annealed samples drastically decreased. The sample showed the improved ferromagnetic properties compared with other samples. These results are considered as originating from the effective incorporation of Mn ions into the InP:Zn host lattice with recovering the crystallinity after thermal annealing.",

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T1 - Relevant correlation between electrical and magnetic properties for p -type InP:Zn implanted with Mn (10 at. %)

AU - Kim, Jin Soak

AU - Kim, Eun Kyu

AU - Shon, Yoon

AU - Lee, Sejoon

PY - 2008

Y1 - 2008

N2 - A relevant correlation between magnetic properties and Mn-related deep level states for the Mn-implanted p -type InMnP:Zn layers annealed at 400-600 °C was investigated. For the 600 °C -annealed sample, the portion of deep level transient spectroscopy signals corresponding to Mn-related states was observed to significantly increase while that related to charge-trapping centers observed for 400 and 500 °C -annealed samples drastically decreased. The sample showed the improved ferromagnetic properties compared with other samples. These results are considered as originating from the effective incorporation of Mn ions into the InP:Zn host lattice with recovering the crystallinity after thermal annealing.

AB - A relevant correlation between magnetic properties and Mn-related deep level states for the Mn-implanted p -type InMnP:Zn layers annealed at 400-600 °C was investigated. For the 600 °C -annealed sample, the portion of deep level transient spectroscopy signals corresponding to Mn-related states was observed to significantly increase while that related to charge-trapping centers observed for 400 and 500 °C -annealed samples drastically decreased. The sample showed the improved ferromagnetic properties compared with other samples. These results are considered as originating from the effective incorporation of Mn ions into the InP:Zn host lattice with recovering the crystallinity after thermal annealing.

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VL - 93

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 24

M1 - 242110

ER -

Relevant correlation between electrical and magnetic properties for p -type InP:Zn implanted with Mn (10 at. %)

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