Relevant correlation between oxygen-related residual defects and ferromagnetic properties for As-doped p-ZnMnO thin films

Sejoon Lee, Youngmin Lee, Han Tae Ryu, Deuk Young Kim, Tae Won Kang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Through both the control of oxygen partial pressure during the initial growth stage before As + implantation and the H 2O 2 treatment after As doping, ferromagnetic properties for p-ZnMnO:As were effectively improved because of the enhanced long-range ferromagnetic exchange couplings due to the decrease in negatively-charged residual defects.

Original languageEnglish
Title of host publicationPhysics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30
Pages159-160
Number of pages2
DOIs
StatePublished - 2011
Event30th International Conference on the Physics of Semiconductors, ICPS-30 - Seoul, Korea, Republic of
Duration: 25 Jul 201030 Jul 2010

Publication series

NameAIP Conference Proceedings
Volume1399
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

Conference30th International Conference on the Physics of Semiconductors, ICPS-30
Country/TerritoryKorea, Republic of
CitySeoul
Period25/07/1030/07/10

Keywords

  • As-doped p-type ZnMnO
  • Enhanced ferromagnetism
  • H O -treatment
  • Oxygen partial pressure

Fingerprint

Dive into the research topics of 'Relevant correlation between oxygen-related residual defects and ferromagnetic properties for As-doped p-ZnMnO thin films'. Together they form a unique fingerprint.

Cite this