@inproceedings{af4c256970864dcdaa2b6bfd8bd42d2e,
title = "Relevant correlation between oxygen-related residual defects and ferromagnetic properties for As-doped p-ZnMnO thin films",
abstract = "Through both the control of oxygen partial pressure during the initial growth stage before As + implantation and the H 2O 2 treatment after As doping, ferromagnetic properties for p-ZnMnO:As were effectively improved because of the enhanced long-range ferromagnetic exchange couplings due to the decrease in negatively-charged residual defects.",
keywords = "As-doped p-type ZnMnO, Enhanced ferromagnetism, H O -treatment, Oxygen partial pressure",
author = "Sejoon Lee and Youngmin Lee and Ryu, {Han Tae} and Kim, {Deuk Young} and Kang, {Tae Won}",
year = "2011",
doi = "10.1063/1.3666305",
language = "English",
isbn = "9780735410022",
series = "AIP Conference Proceedings",
pages = "159--160",
booktitle = "Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30",
note = "30th International Conference on the Physics of Semiconductors, ICPS-30 ; Conference date: 25-07-2010 Through 30-07-2010",
}