Abstract
InMnP:Zn epilayers doped with Mn (0.290 at.%) were annealed at 723-873 K for 60 s and 473-573 K for 30 min. Using Auger electron spectroscopy, the changes in concentration profiles of the epilayers correlated to the ferromagnetic origin as a function of the annealing conditions. The epilayers annealed at 723-873 K for 60 s exhibited InMn 3 persisting up to 583 K. For InMnP:Zn epilayers annealed at 523-573 K for 30 min, the concentration depth profiles remained flat so that the stoichiometry was well maintained without precipitates such as InMn 3 and MnP comparable to the as-grown InP:Zn before doping Mn. These samples showed clear ferromagnetic hysteresis loops. Curie temperature was about 150 K. A ferromagnetic hysteresis loop was obtained even at very lower annealing temperature of 473 K.
Original language | English |
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Pages (from-to) | 494-498 |
Number of pages | 5 |
Journal | Applied Surface Science |
Volume | 254 |
Issue number | 2 |
DOIs | |
State | Published - 15 Nov 2007 |
Keywords
- Auger electron spectroscopy
- Hysteresis loop
- InMnP:Zn epilayer
- MBE
- MOCVD
- Morphology