Reliability and breakdown characteristics of HfO2-based GaAs metal-oxide-semiconductor capacitors with a thin Si interface layer

T. Das; C. Mahata; G. K. Dalapati; D. Chi; G. Sutradhar; P. K. Bose; C. K. Maiti

doi:10.1109/IPFA.2010.5532235

Reliability and breakdown characteristics of HfO₂-based GaAs metal-oxide-semiconductor capacitors with a thin Si interface layer

T. Das, C. Mahata, G. K. Dalapati, D. Chi, G. Sutradhar, P. K. Bose, C. K. Maiti

Department of Electronics & Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The electrical characteristics and reliability of HfO₂-based p-GaAs metal-oxide-semiconductor (MOS) capacitors (EOT: 2.4 nm to 4.8 nm) with a thin Silicon (Si) interfacial passivation layer (IPL) have been investigated with different thicknesses of HfO₂. SILC generation kinetics and flat band instability were investigated via CVS and CCS measurements. In addition, breakdown voltages of gate oxide according to different thicknesses of HfO ₂ were studied. It is found that an optimum Si IPL and a thin HfO₂ layer are essential to improve reliability characteristics of GaAs MOS capacitors which will enable gate oxide scaling down in GaAs system.

Original language	English
Title of host publication	IPFA 2010 - 17th International Symposium on the Physical and Failure Analysis of Integrated Circuits
DOIs	https://doi.org/10.1109/IPFA.2010.5532235
State	Published - 2010
Event	17th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2010 - Singapore, Singapore Duration: 5 Jul 2010 → 9 Jul 2010

Publication series

Name	Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Conference

Conference	17th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2010
Country/Territory	Singapore
City	Singapore
Period	5/07/10 → 9/07/10

Access to Document

10.1109/IPFA.2010.5532235

Cite this

Das, T., Mahata, C., Dalapati, G. K., Chi, D., Sutradhar, G., Bose, P. K., & Maiti, C. K. (2010). Reliability and breakdown characteristics of HfO₂-based GaAs metal-oxide-semiconductor capacitors with a thin Si interface layer. In IPFA 2010 - 17th International Symposium on the Physical and Failure Analysis of Integrated Circuits Article 5532235 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA). https://doi.org/10.1109/IPFA.2010.5532235

Das, T. ; Mahata, C. ; Dalapati, G. K. et al. / Reliability and breakdown characteristics of HfO₂-based GaAs metal-oxide-semiconductor capacitors with a thin Si interface layer. IPFA 2010 - 17th International Symposium on the Physical and Failure Analysis of Integrated Circuits. 2010. (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA).

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title = "Reliability and breakdown characteristics of HfO2-based GaAs metal-oxide-semiconductor capacitors with a thin Si interface layer",

abstract = "The electrical characteristics and reliability of HfO2-based p-GaAs metal-oxide-semiconductor (MOS) capacitors (EOT: 2.4 nm to 4.8 nm) with a thin Silicon (Si) interfacial passivation layer (IPL) have been investigated with different thicknesses of HfO2. SILC generation kinetics and flat band instability were investigated via CVS and CCS measurements. In addition, breakdown voltages of gate oxide according to different thicknesses of HfO 2 were studied. It is found that an optimum Si IPL and a thin HfO2 layer are essential to improve reliability characteristics of GaAs MOS capacitors which will enable gate oxide scaling down in GaAs system.",

author = "T. Das and C. Mahata and Dalapati, {G. K.} and D. Chi and G. Sutradhar and Bose, {P. K.} and Maiti, {C. K.}",

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note = "17th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2010 ; Conference date: 05-07-2010 Through 09-07-2010",

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Das, T, Mahata, C, Dalapati, GK, Chi, D, Sutradhar, G, Bose, PK & Maiti, CK 2010, Reliability and breakdown characteristics of HfO₂-based GaAs metal-oxide-semiconductor capacitors with a thin Si interface layer. in IPFA 2010 - 17th International Symposium on the Physical and Failure Analysis of Integrated Circuits., 5532235, Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA, 17th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2010, Singapore, Singapore, 5/07/10. https://doi.org/10.1109/IPFA.2010.5532235

Reliability and breakdown characteristics of HfO₂-based GaAs metal-oxide-semiconductor capacitors with a thin Si interface layer. / Das, T.; Mahata, C.; Dalapati, G. K. et al.
IPFA 2010 - 17th International Symposium on the Physical and Failure Analysis of Integrated Circuits. 2010. 5532235 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AB - The electrical characteristics and reliability of HfO2-based p-GaAs metal-oxide-semiconductor (MOS) capacitors (EOT: 2.4 nm to 4.8 nm) with a thin Silicon (Si) interfacial passivation layer (IPL) have been investigated with different thicknesses of HfO2. SILC generation kinetics and flat band instability were investigated via CVS and CCS measurements. In addition, breakdown voltages of gate oxide according to different thicknesses of HfO 2 were studied. It is found that an optimum Si IPL and a thin HfO2 layer are essential to improve reliability characteristics of GaAs MOS capacitors which will enable gate oxide scaling down in GaAs system.

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Das T, Mahata C, Dalapati GK, Chi D, Sutradhar G, Bose PK et al. Reliability and breakdown characteristics of HfO₂-based GaAs metal-oxide-semiconductor capacitors with a thin Si interface layer. In IPFA 2010 - 17th International Symposium on the Physical and Failure Analysis of Integrated Circuits. 2010. 5532235. (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA). doi: 10.1109/IPFA.2010.5532235