Reliability and charge trapping properties of Zr02 gate dielectric on Si passivated p-GaAs

T. Das, C. Mahata, G. K. Dalapati, D. Chi, G. Sutradhar, P. K. Bose, C. K. Maiti

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Reliability characteristics of Zr02 gate dielectric films on p-GaAs with ultrathin Silicon (Si) interfacial passivated layer have been investigated. Results of a systematic study on the impacts of post deposition annealing (PDA) on the physical and electrical properties of RF-sputtered Zr02 dielectric layers on Si-passivated p-GaAs substrates are reported. The electrical characteristics have been performed using C-V, I-V, CVS and CCS to understand the reliability and the interface trapping behaviour of TaN/Zr02/Silp-GaAs gate stack. Low positive charge trapping after N2 annealing was observed for different constant voltage and current stressing conditions.

Original languageEnglish
Title of host publicationProceedings of the 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009
Pages130-133
Number of pages4
DOIs
StatePublished - 2009
Event2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009 - Suzhou, China
Duration: 6 Jul 200910 Jul 2009

Publication series

NameProceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Conference

Conference2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009
Country/TerritoryChina
CitySuzhou
Period6/07/0910/07/09

Fingerprint

Dive into the research topics of 'Reliability and charge trapping properties of Zr02 gate dielectric on Si passivated p-GaAs'. Together they form a unique fingerprint.

Cite this