@inproceedings{8bff309aae1d4dc5825a421bcf56c140,
title = "Reliability and charge trapping properties of Zr02 gate dielectric on Si passivated p-GaAs",
abstract = "Reliability characteristics of Zr02 gate dielectric films on p-GaAs with ultrathin Silicon (Si) interfacial passivated layer have been investigated. Results of a systematic study on the impacts of post deposition annealing (PDA) on the physical and electrical properties of RF-sputtered Zr02 dielectric layers on Si-passivated p-GaAs substrates are reported. The electrical characteristics have been performed using C-V, I-V, CVS and CCS to understand the reliability and the interface trapping behaviour of TaN/Zr02/Silp-GaAs gate stack. Low positive charge trapping after N2 annealing was observed for different constant voltage and current stressing conditions.",
author = "T. Das and C. Mahata and Dalapati, {G. K.} and D. Chi and G. Sutradhar and Bose, {P. K.} and Maiti, {C. K.}",
year = "2009",
doi = "10.1109/IPFA.2009.5232683",
language = "English",
isbn = "9781424439102",
series = "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA",
pages = "130--133",
booktitle = "Proceedings of the 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009",
note = "2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009 ; Conference date: 06-07-2009 Through 10-07-2009",
}