Reliability assessment of SiO2/ZrO2 stack gate dielectric on strained-Si/Si0.8Ge0.2 heterolayers under dynamic and AC stress

M. K. Bera; C. Mahata; C. K. Maiti

doi:10.1016/j.mssp.2008.12.002

Reliability assessment of SiO₂/ZrO₂ stack gate dielectric on strained-Si/Si_0.8Ge_0.2 heterolayers under dynamic and AC stress

M. K. Bera, C. Mahata, C. K. Maiti

Department of Electronics & Electrical Engineering

Indian Institute of Technology Kharagpur

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The reliability characteristics of SiO₂/ZrO₂ gate dielectric stacks on strained-Si/Si_0.8Ge_0.2 have been investigated under dynamic and pulsed voltage stresses of different amplitude and frequency in order to analyze the transient response and the degradation of oxide as a function of stress parameters. The current transients observed in dynamic voltage stresses have been interpreted in terms of the charging/discharging of interface and bulk traps. The evolution of the current during unipolar pulsed voltage stresses shows the degradation being much faster at low frequencies than at high frequencies. Results have been compared with those obtained after CVS, as a function of injected charge and pulse frequency.

Original language	English
Pages (from-to)	254-258
Number of pages	5
Journal	Materials Science in Semiconductor Processing
Volume	11
Issue number	5
DOIs	https://doi.org/10.1016/j.mssp.2008.12.002
State	Published - Oct 2008

Keywords

Dynamic stress
High-k gate dielectric
Oxide reliability
Strained-Si

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10.1016/j.mssp.2008.12.002

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title = "Reliability assessment of SiO2/ZrO2 stack gate dielectric on strained-Si/Si0.8Ge0.2 heterolayers under dynamic and AC stress",

abstract = "The reliability characteristics of SiO2/ZrO2 gate dielectric stacks on strained-Si/Si0.8Ge0.2 have been investigated under dynamic and pulsed voltage stresses of different amplitude and frequency in order to analyze the transient response and the degradation of oxide as a function of stress parameters. The current transients observed in dynamic voltage stresses have been interpreted in terms of the charging/discharging of interface and bulk traps. The evolution of the current during unipolar pulsed voltage stresses shows the degradation being much faster at low frequencies than at high frequencies. Results have been compared with those obtained after CVS, as a function of injected charge and pulse frequency.",

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AU - Bera, M. K.

AU - Mahata, C.

AU - Maiti, C. K.

PY - 2008/10

Y1 - 2008/10

N2 - The reliability characteristics of SiO2/ZrO2 gate dielectric stacks on strained-Si/Si0.8Ge0.2 have been investigated under dynamic and pulsed voltage stresses of different amplitude and frequency in order to analyze the transient response and the degradation of oxide as a function of stress parameters. The current transients observed in dynamic voltage stresses have been interpreted in terms of the charging/discharging of interface and bulk traps. The evolution of the current during unipolar pulsed voltage stresses shows the degradation being much faster at low frequencies than at high frequencies. Results have been compared with those obtained after CVS, as a function of injected charge and pulse frequency.

AB - The reliability characteristics of SiO2/ZrO2 gate dielectric stacks on strained-Si/Si0.8Ge0.2 have been investigated under dynamic and pulsed voltage stresses of different amplitude and frequency in order to analyze the transient response and the degradation of oxide as a function of stress parameters. The current transients observed in dynamic voltage stresses have been interpreted in terms of the charging/discharging of interface and bulk traps. The evolution of the current during unipolar pulsed voltage stresses shows the degradation being much faster at low frequencies than at high frequencies. Results have been compared with those obtained after CVS, as a function of injected charge and pulse frequency.

KW - Dynamic stress

KW - High-k gate dielectric

KW - Oxide reliability

KW - Strained-Si

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DO - 10.1016/j.mssp.2008.12.002

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SN - 1369-8001

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JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

IS - 5

ER -

Reliability assessment of SiO₂/ZrO₂ stack gate dielectric on strained-Si/Si_0.8Ge_0.2 heterolayers under dynamic and AC stress

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