Reliability behavior of TaAIOx metal-insulator-metal capacitors

M. K. Hota; C. Mahata; M. K. Bera; S. Mallik; B. Majhi; T. Das; C. K. Sarkar; C. K. Maiti

doi:10.1109/IPFA.2009.5232720

Reliability behavior of TaAIOx metal-insulator-metal capacitors

M. K. Hota
, C. Mahata
, M. K. Bera
, S. Mallik
, B. Majhi
, T. Das
, C. K. Sarkar
, C. K. Maiti

Department of Electronics & Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

Reliability characteristics of TaAIO. high-k dielectric MIM capacitors are reported. TaAIO. films have been deposited by RF co-sputtering of Ta20S and Ah03 targets at a low substrate temperature. A high capacitance density and a low value of VCC (voltage coefficients of capacitance) have been achieved. Degradation kinetics in TaAIO.-based MIM capacitors have been studied under constant current stressing (CCS: 20 to 60 nA) and constant voltage stressing (CVS: 3 to 7 V). A dielectric breakdown voltage in the range of - 4.2 - 5.4 MVIcm was found for TaAIO. films.

Original language	English
Title of host publication	Proceedings of the 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009
Pages	803-806
Number of pages	4
DOIs	https://doi.org/10.1109/IPFA.2009.5232720
State	Published - 2009
Event	2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009 - Suzhou, China Duration: 6 Jul 2009 → 10 Jul 2009

Publication series

Name	Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Conference

Conference	2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009
Country/Territory	China
City	Suzhou
Period	6/07/09 → 10/07/09

Access to Document

10.1109/IPFA.2009.5232720

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Hota, M. K., Mahata, C., Bera, M. K., Mallik, S., Majhi, B., Das, T., Sarkar, C. K., & Maiti, C. K. (2009). Reliability behavior of TaAIOx metal-insulator-metal capacitors. In Proceedings of the 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009 (pp. 803-806). Article 5232720 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA). https://doi.org/10.1109/IPFA.2009.5232720

Hota, M. K. ; Mahata, C. ; Bera, M. K. et al. / Reliability behavior of TaAIOx metal-insulator-metal capacitors. Proceedings of the 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009. 2009. pp. 803-806 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA).

@inproceedings{498ca5784b9246eba112b80e5f9fde71,

title = "Reliability behavior of TaAIOx metal-insulator-metal capacitors",

abstract = "Reliability characteristics of TaAIO. high-k dielectric MIM capacitors are reported. TaAIO. films have been deposited by RF co-sputtering of Ta20S and Ah03 targets at a low substrate temperature. A high capacitance density and a low value of VCC (voltage coefficients of capacitance) have been achieved. Degradation kinetics in TaAIO.-based MIM capacitors have been studied under constant current stressing (CCS: 20 to 60 nA) and constant voltage stressing (CVS: 3 to 7 V). A dielectric breakdown voltage in the range of - 4.2 - 5.4 MVIcm was found for TaAIO. films.",

author = "Hota, \{M. K.\} and C. Mahata and Bera, \{M. K.\} and S. Mallik and B. Majhi and T. Das and Sarkar, \{C. K.\} and Maiti, \{C. K.\}",

year = "2009",

doi = "10.1109/IPFA.2009.5232720",

language = "English",

isbn = "9781424439102",

series = "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA",

pages = "803--806",

booktitle = "Proceedings of the 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009",

note = "2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009 ; Conference date: 06-07-2009 Through 10-07-2009",

}

Hota, MK, Mahata, C, Bera, MK, Mallik, S, Majhi, B, Das, T, Sarkar, CK & Maiti, CK 2009, Reliability behavior of TaAIOx metal-insulator-metal capacitors. in Proceedings of the 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009., 5232720, Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA, pp. 803-806, 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009, Suzhou, China, 6/07/09. https://doi.org/10.1109/IPFA.2009.5232720

Reliability behavior of TaAIOx metal-insulator-metal capacitors. / Hota, M. K.; Mahata, C.; Bera, M. K. et al.
Proceedings of the 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009. 2009. p. 803-806 5232720 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Reliability behavior of TaAIOx metal-insulator-metal capacitors

AU - Hota, M. K.

AU - Mahata, C.

AU - Bera, M. K.

AU - Mallik, S.

AU - Majhi, B.

AU - Das, T.

AU - Sarkar, C. K.

AU - Maiti, C. K.

PY - 2009

Y1 - 2009

N2 - Reliability characteristics of TaAIO. high-k dielectric MIM capacitors are reported. TaAIO. films have been deposited by RF co-sputtering of Ta20S and Ah03 targets at a low substrate temperature. A high capacitance density and a low value of VCC (voltage coefficients of capacitance) have been achieved. Degradation kinetics in TaAIO.-based MIM capacitors have been studied under constant current stressing (CCS: 20 to 60 nA) and constant voltage stressing (CVS: 3 to 7 V). A dielectric breakdown voltage in the range of - 4.2 - 5.4 MVIcm was found for TaAIO. films.

AB - Reliability characteristics of TaAIO. high-k dielectric MIM capacitors are reported. TaAIO. films have been deposited by RF co-sputtering of Ta20S and Ah03 targets at a low substrate temperature. A high capacitance density and a low value of VCC (voltage coefficients of capacitance) have been achieved. Degradation kinetics in TaAIO.-based MIM capacitors have been studied under constant current stressing (CCS: 20 to 60 nA) and constant voltage stressing (CVS: 3 to 7 V). A dielectric breakdown voltage in the range of - 4.2 - 5.4 MVIcm was found for TaAIO. films.

UR - https://www.scopus.com/pages/publications/71049169335

U2 - 10.1109/IPFA.2009.5232720

DO - 10.1109/IPFA.2009.5232720

M3 - Conference contribution

AN - SCOPUS:71049169335

SN - 9781424439102

T3 - Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

SP - 803

EP - 806

BT - Proceedings of the 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009

T2 - 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009

Y2 - 6 July 2009 through 10 July 2009

ER -

Hota MK, Mahata C, Bera MK, Mallik S, Majhi B, Das T et al. Reliability behavior of TaAIOx metal-insulator-metal capacitors. In Proceedings of the 2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2009. 2009. p. 803-806. 5232720. (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA). doi: 10.1109/IPFA.2009.5232720

Reliability behavior of TaAIOx metal-insulator-metal capacitors

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