Reliability of Crystalline Indium-Gallium-Zinc-Oxide Thin-Film Transistors under Bias Stress with Light Illumination

Kyung Park; Hyun Woo Park; Hyun Soo Shin; Jonguk Bae; Kwon Shik Park; Inbyeong Kang; Kwun Bum Chung; Jang Yeon Kwon

doi:10.1109/TED.2015.2458987

Reliability of Crystalline Indium-Gallium-Zinc-Oxide Thin-Film Transistors under Bias Stress with Light Illumination

Kyung Park, Hyun Woo Park, Hyun Soo Shin, Jonguk Bae, Kwon Shik Park, Inbyeong Kang, Kwun Bum Chung, Jang Yeon Kwon

Department of Physics

Research output: Contribution to journal › Article › peer-review

39 Scopus citations

Abstract

We investigate the effect of crystalline indium-gallium-zinc-oxide (c-IGZO) thin films on device performance, and evaluate the device reliability of c-IGZO under positive/negative bias stress with/without illumination. The crystal structure of deposited-IGZO thin film is controlled by annealing temperatures, and the transition from an amorphous to a crystalline structure is observed at above 800 °C. Even though the c-IGZO thin-film transistors (TFTs) exhibit lower carrier mobility, compared with amorphous IGZO (a-IGZO) TFTs, the remarkable improvement of the device reliability for the c-IGZO TFTs is observed especially under the bias stress with illumination. This comes from lower defect density compared with the a-IGZO film.

Original language	English
Article number	7180350
Pages (from-to)	2900-2905
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	62
Issue number	9
DOIs	https://doi.org/10.1109/TED.2015.2458987
State	Published - 1 Sep 2015

Keywords

Crystallization
electronic structure
indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs)
oxide semiconductor
reliability.

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10.1109/TED.2015.2458987

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title = "Reliability of Crystalline Indium-Gallium-Zinc-Oxide Thin-Film Transistors under Bias Stress with Light Illumination",

abstract = "We investigate the effect of crystalline indium-gallium-zinc-oxide (c-IGZO) thin films on device performance, and evaluate the device reliability of c-IGZO under positive/negative bias stress with/without illumination. The crystal structure of deposited-IGZO thin film is controlled by annealing temperatures, and the transition from an amorphous to a crystalline structure is observed at above 800 °C. Even though the c-IGZO thin-film transistors (TFTs) exhibit lower carrier mobility, compared with amorphous IGZO (a-IGZO) TFTs, the remarkable improvement of the device reliability for the c-IGZO TFTs is observed especially under the bias stress with illumination. This comes from lower defect density compared with the a-IGZO film.",

keywords = "Crystallization, electronic structure, indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs), oxide semiconductor, reliability.",

author = "Kyung Park and Park, {Hyun Woo} and Shin, {Hyun Soo} and Jonguk Bae and Park, {Kwon Shik} and Inbyeong Kang and Chung, {Kwun Bum} and Kwon, {Jang Yeon}",

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doi = "10.1109/TED.2015.2458987",

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T1 - Reliability of Crystalline Indium-Gallium-Zinc-Oxide Thin-Film Transistors under Bias Stress with Light Illumination

AU - Park, Kyung

AU - Park, Hyun Woo

AU - Shin, Hyun Soo

AU - Bae, Jonguk

AU - Park, Kwon Shik

AU - Kang, Inbyeong

AU - Chung, Kwun Bum

AU - Kwon, Jang Yeon

PY - 2015/9/1

Y1 - 2015/9/1

N2 - We investigate the effect of crystalline indium-gallium-zinc-oxide (c-IGZO) thin films on device performance, and evaluate the device reliability of c-IGZO under positive/negative bias stress with/without illumination. The crystal structure of deposited-IGZO thin film is controlled by annealing temperatures, and the transition from an amorphous to a crystalline structure is observed at above 800 °C. Even though the c-IGZO thin-film transistors (TFTs) exhibit lower carrier mobility, compared with amorphous IGZO (a-IGZO) TFTs, the remarkable improvement of the device reliability for the c-IGZO TFTs is observed especially under the bias stress with illumination. This comes from lower defect density compared with the a-IGZO film.

AB - We investigate the effect of crystalline indium-gallium-zinc-oxide (c-IGZO) thin films on device performance, and evaluate the device reliability of c-IGZO under positive/negative bias stress with/without illumination. The crystal structure of deposited-IGZO thin film is controlled by annealing temperatures, and the transition from an amorphous to a crystalline structure is observed at above 800 °C. Even though the c-IGZO thin-film transistors (TFTs) exhibit lower carrier mobility, compared with amorphous IGZO (a-IGZO) TFTs, the remarkable improvement of the device reliability for the c-IGZO TFTs is observed especially under the bias stress with illumination. This comes from lower defect density compared with the a-IGZO film.

KW - Crystallization

KW - electronic structure

KW - indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs)

KW - oxide semiconductor

KW - reliability.

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DO - 10.1109/TED.2015.2458987

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SP - 2900

EP - 2905

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 9

M1 - 7180350

ER -

Reliability of Crystalline Indium-Gallium-Zinc-Oxide Thin-Film Transistors under Bias Stress with Light Illumination

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