Reliability of Crystalline Indium-Gallium-Zinc-Oxide Thin-Film Transistors under Bias Stress with Light Illumination

Kyung Park; Hyun Woo Park; Hyun Soo Shin; Jonguk Bae; Kwon Shik Park; Inbyeong Kang; Kwun Bum Chung; Jang Yeon Kwon

doi:10.1109/TED.2015.2458987

Reliability of Crystalline Indium-Gallium-Zinc-Oxide Thin-Film Transistors under Bias Stress with Light Illumination

Kyung Park
, Hyun Woo Park
, Hyun Soo Shin
, Jonguk Bae
, Kwon Shik Park
, Inbyeong Kang
, Kwun Bum Chung
, Jang Yeon Kwon

Department of Physics

Yonsei University
Dongguk University
LG Corporation

Research output: Contribution to journal › Article › peer-review

50 Scopus citations

Abstract

We investigate the effect of crystalline indium-gallium-zinc-oxide (c-IGZO) thin films on device performance, and evaluate the device reliability of c-IGZO under positive/negative bias stress with/without illumination. The crystal structure of deposited-IGZO thin film is controlled by annealing temperatures, and the transition from an amorphous to a crystalline structure is observed at above 800 °C. Even though the c-IGZO thin-film transistors (TFTs) exhibit lower carrier mobility, compared with amorphous IGZO (a-IGZO) TFTs, the remarkable improvement of the device reliability for the c-IGZO TFTs is observed especially under the bias stress with illumination. This comes from lower defect density compared with the a-IGZO film.

Original language	English
Article number	7180350
Pages (from-to)	2900-2905
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	62
Issue number	9
DOIs	https://doi.org/10.1109/TED.2015.2458987
State	Published - 1 Sep 2015

Keywords

Crystallization
electronic structure
indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs)
oxide semiconductor
reliability.

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10.1109/TED.2015.2458987

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title = "Reliability of Crystalline Indium-Gallium-Zinc-Oxide Thin-Film Transistors under Bias Stress with Light Illumination",

abstract = "We investigate the effect of crystalline indium-gallium-zinc-oxide (c-IGZO) thin films on device performance, and evaluate the device reliability of c-IGZO under positive/negative bias stress with/without illumination. The crystal structure of deposited-IGZO thin film is controlled by annealing temperatures, and the transition from an amorphous to a crystalline structure is observed at above 800 °C. Even though the c-IGZO thin-film transistors (TFTs) exhibit lower carrier mobility, compared with amorphous IGZO (a-IGZO) TFTs, the remarkable improvement of the device reliability for the c-IGZO TFTs is observed especially under the bias stress with illumination. This comes from lower defect density compared with the a-IGZO film.",

keywords = "Crystallization, electronic structure, indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs), oxide semiconductor, reliability.",

author = "Kyung Park and Park, \{Hyun Woo\} and Shin, \{Hyun Soo\} and Jonguk Bae and Park, \{Kwon Shik\} and Inbyeong Kang and Chung, \{Kwun Bum\} and Kwon, \{Jang Yeon\}",

note = "Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

year = "2015",

month = sep,

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doi = "10.1109/TED.2015.2458987",

language = "English",

volume = "62",

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T1 - Reliability of Crystalline Indium-Gallium-Zinc-Oxide Thin-Film Transistors under Bias Stress with Light Illumination

AU - Park, Kyung

AU - Park, Hyun Woo

AU - Shin, Hyun Soo

AU - Bae, Jonguk

AU - Park, Kwon Shik

AU - Kang, Inbyeong

AU - Chung, Kwun Bum

AU - Kwon, Jang Yeon

PY - 2015/9/1

Y1 - 2015/9/1

N2 - We investigate the effect of crystalline indium-gallium-zinc-oxide (c-IGZO) thin films on device performance, and evaluate the device reliability of c-IGZO under positive/negative bias stress with/without illumination. The crystal structure of deposited-IGZO thin film is controlled by annealing temperatures, and the transition from an amorphous to a crystalline structure is observed at above 800 °C. Even though the c-IGZO thin-film transistors (TFTs) exhibit lower carrier mobility, compared with amorphous IGZO (a-IGZO) TFTs, the remarkable improvement of the device reliability for the c-IGZO TFTs is observed especially under the bias stress with illumination. This comes from lower defect density compared with the a-IGZO film.

AB - We investigate the effect of crystalline indium-gallium-zinc-oxide (c-IGZO) thin films on device performance, and evaluate the device reliability of c-IGZO under positive/negative bias stress with/without illumination. The crystal structure of deposited-IGZO thin film is controlled by annealing temperatures, and the transition from an amorphous to a crystalline structure is observed at above 800 °C. Even though the c-IGZO thin-film transistors (TFTs) exhibit lower carrier mobility, compared with amorphous IGZO (a-IGZO) TFTs, the remarkable improvement of the device reliability for the c-IGZO TFTs is observed especially under the bias stress with illumination. This comes from lower defect density compared with the a-IGZO film.

KW - Crystallization

KW - electronic structure

KW - indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs)

KW - oxide semiconductor

KW - reliability.

UR - https://www.scopus.com/pages/publications/85027956277

U2 - 10.1109/TED.2015.2458987

DO - 10.1109/TED.2015.2458987

M3 - Article

AN - SCOPUS:85027956277

SN - 0018-9383

VL - 62

SP - 2900

EP - 2905

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 9

M1 - 7180350

ER -

Reliability of Crystalline Indium-Gallium-Zinc-Oxide Thin-Film Transistors under Bias Stress with Light Illumination

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