Reliability of Ti-based gate dielectrics on strained-Si 0.91Ge0.09 and Ge under dynamic and AC stressing

C. Mahata, M. K. Bera, P. K. Bose, C. K. Maiti

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The trapped charge distributions in Al/TiO2/GeO xNy/p-Ge and Al/ Ti02/SiOxNy/ strained-Si0.91 Ge0.09 structures subjected dynamic stress of different amplitude and frequency in order to analyze the transient response and the degradation of the oxide as a function of different stress condition. The current transients and voltage transient observed in dynamic voltage (-4V to -9V) and current stresses (-2.5mA/cm2 to -12.5mA/cm2) have been interpreted in terms of the charging/discharging of interface and bulk traps. The evolution of the current during unipolar voltage stresses shows the degradation being much faster at low frequencies than at high frequencies.

Original languageEnglish
Title of host publicationECS Transactions - SiGe, Ge, and Related Compounds 3
Subtitle of host publicationMaterials, Processing, and Devices
PublisherElectrochemical Society Inc.
Pages223-227
Number of pages5
Edition10
ISBN (Print)9781566776561
DOIs
StatePublished - 2009
Event3rd SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 214th ECS Meeting - Honolulu, HI, United States
Duration: 12 Oct 200817 Oct 2008

Publication series

NameECS Transactions
Number10
Volume16
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

Conference3rd SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 214th ECS Meeting
Country/TerritoryUnited States
CityHonolulu, HI
Period12/10/0817/10/08

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