@inproceedings{29b4315ed4f648f497871ad7b240458d,
title = "Reliability of Ti-based gate dielectrics on strained-Si 0.91Ge0.09 and Ge under dynamic and AC stressing",
abstract = "The trapped charge distributions in Al/TiO2/GeO xNy/p-Ge and Al/ Ti02/SiOxNy/ strained-Si0.91 Ge0.09 structures subjected dynamic stress of different amplitude and frequency in order to analyze the transient response and the degradation of the oxide as a function of different stress condition. The current transients and voltage transient observed in dynamic voltage (-4V to -9V) and current stresses (-2.5mA/cm2 to -12.5mA/cm2) have been interpreted in terms of the charging/discharging of interface and bulk traps. The evolution of the current during unipolar voltage stresses shows the degradation being much faster at low frequencies than at high frequencies.",
author = "C. Mahata and Bera, {M. K.} and Bose, {P. K.} and Maiti, {C. K.}",
year = "2009",
doi = "10.1149/1.2986774",
language = "English",
isbn = "9781566776561",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "10",
pages = "223--227",
booktitle = "ECS Transactions - SiGe, Ge, and Related Compounds 3",
address = "United States",
edition = "10",
note = "3rd SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 214th ECS Meeting ; Conference date: 12-10-2008 Through 17-10-2008",
}