Reliability of ultra-thin titanium dioxide (TiO2) films on strained-Si

M. K. Bera; C. Mahata; C. K. Maiti

doi:10.1016/j.tsf.2008.08.008

Reliability of ultra-thin titanium dioxide (TiO₂) films on strained-Si

M. K. Bera, C. Mahata, C. K. Maiti

Department of Electronics & Electrical Engineering

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

Ultra-thin high-k titanium oxide (equivalent oxide thickness ~ 2.2 nm) films have been deposited on strained-Si/relaxed-Si_0.8Ge_0.2 heterolayers using titanium tetrakis iso-propoxides (TTIP) as an organometallic source at low temperature (< 200 °C) by plasma enhanced chemical vapor deposition (PECVD) technique in a microwave (700 W, 2.45 GHz) plasma cavity discharge system at a pressure of 66.67 Pa. The trapping/detrapping behavior of charge carriers in ultra-thin TiO₂ gate dielectric during constant current (CCS) and voltage stressing (CVS) has been investigated. Normalized trapping centroid and trapped charge density variation with injected fluences have been investigated and also empirically modeled. Oxide lifetime is predicted using empirical reliability model developed. Dielectric breakdown and reliability of the dielectric films have been studied using constant voltage stressing. A high time-dependent dielectric breakdown (TDDB, t_bd > 1000 s) is observed under high constant voltage stress.

Original language	English
Pages (from-to)	27-30
Number of pages	4
Journal	Thin Solid Films
Volume	517
Issue number	1
DOIs	https://doi.org/10.1016/j.tsf.2008.08.008
State	Published - 3 Nov 2008

Keywords

Charge trapping
High-k gate dielectric
Oxide reliability
Strained-Si

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title = "Reliability of ultra-thin titanium dioxide (TiO2) films on strained-Si",

abstract = "Ultra-thin high-k titanium oxide (equivalent oxide thickness ~ 2.2 nm) films have been deposited on strained-Si/relaxed-Si0.8Ge0.2 heterolayers using titanium tetrakis iso-propoxides (TTIP) as an organometallic source at low temperature (< 200 °C) by plasma enhanced chemical vapor deposition (PECVD) technique in a microwave (700 W, 2.45 GHz) plasma cavity discharge system at a pressure of 66.67 Pa. The trapping/detrapping behavior of charge carriers in ultra-thin TiO2 gate dielectric during constant current (CCS) and voltage stressing (CVS) has been investigated. Normalized trapping centroid and trapped charge density variation with injected fluences have been investigated and also empirically modeled. Oxide lifetime is predicted using empirical reliability model developed. Dielectric breakdown and reliability of the dielectric films have been studied using constant voltage stressing. A high time-dependent dielectric breakdown (TDDB, tbd > 1000 s) is observed under high constant voltage stress.",

keywords = "Charge trapping, High-k gate dielectric, Oxide reliability, Strained-Si",

author = "Bera, {M. K.} and C. Mahata and Maiti, {C. K.}",

year = "2008",

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AU - Bera, M. K.

AU - Mahata, C.

AU - Maiti, C. K.

PY - 2008/11/3

Y1 - 2008/11/3

N2 - Ultra-thin high-k titanium oxide (equivalent oxide thickness ~ 2.2 nm) films have been deposited on strained-Si/relaxed-Si0.8Ge0.2 heterolayers using titanium tetrakis iso-propoxides (TTIP) as an organometallic source at low temperature (< 200 °C) by plasma enhanced chemical vapor deposition (PECVD) technique in a microwave (700 W, 2.45 GHz) plasma cavity discharge system at a pressure of 66.67 Pa. The trapping/detrapping behavior of charge carriers in ultra-thin TiO2 gate dielectric during constant current (CCS) and voltage stressing (CVS) has been investigated. Normalized trapping centroid and trapped charge density variation with injected fluences have been investigated and also empirically modeled. Oxide lifetime is predicted using empirical reliability model developed. Dielectric breakdown and reliability of the dielectric films have been studied using constant voltage stressing. A high time-dependent dielectric breakdown (TDDB, tbd > 1000 s) is observed under high constant voltage stress.

AB - Ultra-thin high-k titanium oxide (equivalent oxide thickness ~ 2.2 nm) films have been deposited on strained-Si/relaxed-Si0.8Ge0.2 heterolayers using titanium tetrakis iso-propoxides (TTIP) as an organometallic source at low temperature (< 200 °C) by plasma enhanced chemical vapor deposition (PECVD) technique in a microwave (700 W, 2.45 GHz) plasma cavity discharge system at a pressure of 66.67 Pa. The trapping/detrapping behavior of charge carriers in ultra-thin TiO2 gate dielectric during constant current (CCS) and voltage stressing (CVS) has been investigated. Normalized trapping centroid and trapped charge density variation with injected fluences have been investigated and also empirically modeled. Oxide lifetime is predicted using empirical reliability model developed. Dielectric breakdown and reliability of the dielectric films have been studied using constant voltage stressing. A high time-dependent dielectric breakdown (TDDB, tbd > 1000 s) is observed under high constant voltage stress.

KW - Charge trapping

KW - High-k gate dielectric

KW - Oxide reliability

KW - Strained-Si

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DO - 10.1016/j.tsf.2008.08.008

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JF - Thin Solid Films

IS - 1

ER -

Reliability of ultra-thin titanium dioxide (TiO₂) films on strained-Si

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Keywords

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