Reliability of ZrO2/GeOxNy stacked high-k dielectrics on Ge under dynamic and pulsed voltage stress

C. Mahata, M. K. Bera, P. K. Bose, A. Chakraborty, M. SenGupta, C. K. Maiti

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Charge trapping/detrapping in Al/ZrO2/GeOxN y/p-Ge MIS capacitors have been studied under dynamic voltage stresses of different amplitude and frequency in order to analyze the transient response and the degradation of the oxide as a function of the stress parameters. The current transients observed in dynamic voltage stresses have been interpreted in terms of the charging/discharging of interface and bulk traps. The evolution of the current during unipolar and bipolar voltage stresses shows the degradation being much faster at low frequencies than at high frequencies.

Original languageEnglish
Title of host publication2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
DOIs
StatePublished - 2008
Event2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA - Singapore, Singapore
Duration: 7 Jul 200811 Jul 2008

Publication series

NameProceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Conference

Conference2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
Country/TerritorySingapore
CitySingapore
Period7/07/0811/07/08

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