TY - JOUR
T1 - Reliable Neuromorphic and Nociceptive Behavior in Dual-Stacked IGZO/ZrOX Resistive Random Access Memory for Transparent Memory Applications
AU - Jo, Seo Young
AU - Jang, Heeseong
AU - Mishra, Dhananjay
AU - Kim, Sungjun
AU - Jin, Sung Hun
N1 - Publisher Copyright:
© 2025 The Author(s). physica status solidi (RRL) Rapid Research Letters published by Wiley-VCH GmbH.
PY - 2025/10
Y1 - 2025/10
N2 - As data is processed by the von Neumann architecture grows, a bottleneck emerges due to the separation of memory and computation units. Neuromorphic computing, inspired by the human brain, offers a solution by integrating memory and computation in hardware. This study explores ITO/IGZO/ZrO2/Ti resistive random access memory (RRAM), based on a simple manufacturing process and high performance, demonstrating stable memory characteristics with an endurance of 103 cycles and data retention for 104 seconds. The RRAM operates based on oxygen vacancies, enabling linear potentiation, depression, spike-timing-dependent plasticity (STDP), and spike-number-dependent plasticity (SNDP), essential for adjusting synaptic weights in neuromorphic computing. The device successfully demonstrates the capability to mimic nociceptors by detecting pain through the control of threshold voltage, pulse width, and pulse number, enabling the replication of behaviors such as hyperalgesia and allodynia while processing harmful stimuli in a manner similar to human sensory neurons. These findings highlight the potential of transparent ITO/IGZO/ZrO2/ITO RRAM for see through applications in humanoid robots, artificial intelligence (AI) systems, and advanced computing technologies, enabling efficient, brain like processing.
AB - As data is processed by the von Neumann architecture grows, a bottleneck emerges due to the separation of memory and computation units. Neuromorphic computing, inspired by the human brain, offers a solution by integrating memory and computation in hardware. This study explores ITO/IGZO/ZrO2/Ti resistive random access memory (RRAM), based on a simple manufacturing process and high performance, demonstrating stable memory characteristics with an endurance of 103 cycles and data retention for 104 seconds. The RRAM operates based on oxygen vacancies, enabling linear potentiation, depression, spike-timing-dependent plasticity (STDP), and spike-number-dependent plasticity (SNDP), essential for adjusting synaptic weights in neuromorphic computing. The device successfully demonstrates the capability to mimic nociceptors by detecting pain through the control of threshold voltage, pulse width, and pulse number, enabling the replication of behaviors such as hyperalgesia and allodynia while processing harmful stimuli in a manner similar to human sensory neurons. These findings highlight the potential of transparent ITO/IGZO/ZrO2/ITO RRAM for see through applications in humanoid robots, artificial intelligence (AI) systems, and advanced computing technologies, enabling efficient, brain like processing.
KW - indium gallium zinc oxide
KW - neuromorphic
KW - nociceptor
KW - oxygen vacancy
KW - resistive random access memory
KW - ZrOx
UR - https://www.scopus.com/pages/publications/105012390124
U2 - 10.1002/pssr.202500103
DO - 10.1002/pssr.202500103
M3 - Article
AN - SCOPUS:105012390124
SN - 1862-6254
VL - 19
JO - Physica Status Solidi - Rapid Research Letters
JF - Physica Status Solidi - Rapid Research Letters
IS - 10
M1 - 2500103
ER -