Reproducible resistive switching in hydrothermal processed TiO2 nanorod film for non-volatile memory applications

V. Senthilkumar; A. Kathalingam; V. Kannan; Karuppanan Senthil; Jin Koo Rhee

doi:10.1016/j.sna.2013.02.009

Reproducible resistive switching in hydrothermal processed TiO₂ nanorod film for non-volatile memory applications

V. Senthilkumar
, A. Kathalingam
, V. Kannan
, Karuppanan Senthil
, Jin Koo Rhee

Millimeterwave Innovation Technology Research Center

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

In this study, we examined the resistive switching characteristics of the TiO₂ nanorod film based resistance random access memory (RRAM). TiO₂ nanorod film is grown on FTO substrate by simple hydrothermal process. The grown TiO₂ film is characterized using SEM, XRD, EDAX and FTIR for its morphological, structural and compositional studies. XRD result confirms the anatase phase of TiO₂. The analysis of I-V results reveals that the switching property of our device originates from the oxidation/reduction reaction occurred at the interface of Ti/TiO₂. The device exhibited high ON/OFF ratio (>10⁴), long retention and good endurance performance at RT.

Original language	English
Pages (from-to)	135-139
Number of pages	5
Journal	Sensors and Actuators A: Physical
Volume	194
DOIs	https://doi.org/10.1016/j.sna.2013.02.009
State	Published - 2013

Keywords

Electrical properties
Hydrothermal
Nanorods
Resistive memory
Structural properties
Titanium oxide

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10.1016/j.sna.2013.02.009

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title = "Reproducible resistive switching in hydrothermal processed TiO2 nanorod film for non-volatile memory applications",

abstract = "In this study, we examined the resistive switching characteristics of the TiO2 nanorod film based resistance random access memory (RRAM). TiO2 nanorod film is grown on FTO substrate by simple hydrothermal process. The grown TiO2 film is characterized using SEM, XRD, EDAX and FTIR for its morphological, structural and compositional studies. XRD result confirms the anatase phase of TiO2. The analysis of I-V results reveals that the switching property of our device originates from the oxidation/reduction reaction occurred at the interface of Ti/TiO2. The device exhibited high ON/OFF ratio (>104), long retention and good endurance performance at RT.",

keywords = "Electrical properties, Hydrothermal, Nanorods, Resistive memory, Structural properties, Titanium oxide",

author = "V. Senthilkumar and A. Kathalingam and V. Kannan and Karuppanan Senthil and Rhee, \{Jin Koo\}",

year = "2013",

doi = "10.1016/j.sna.2013.02.009",

language = "English",

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TY - JOUR

T1 - Reproducible resistive switching in hydrothermal processed TiO2 nanorod film for non-volatile memory applications

AU - Senthilkumar, V.

AU - Kathalingam, A.

AU - Kannan, V.

AU - Senthil, Karuppanan

AU - Rhee, Jin Koo

PY - 2013

Y1 - 2013

N2 - In this study, we examined the resistive switching characteristics of the TiO2 nanorod film based resistance random access memory (RRAM). TiO2 nanorod film is grown on FTO substrate by simple hydrothermal process. The grown TiO2 film is characterized using SEM, XRD, EDAX and FTIR for its morphological, structural and compositional studies. XRD result confirms the anatase phase of TiO2. The analysis of I-V results reveals that the switching property of our device originates from the oxidation/reduction reaction occurred at the interface of Ti/TiO2. The device exhibited high ON/OFF ratio (>104), long retention and good endurance performance at RT.

AB - In this study, we examined the resistive switching characteristics of the TiO2 nanorod film based resistance random access memory (RRAM). TiO2 nanorod film is grown on FTO substrate by simple hydrothermal process. The grown TiO2 film is characterized using SEM, XRD, EDAX and FTIR for its morphological, structural and compositional studies. XRD result confirms the anatase phase of TiO2. The analysis of I-V results reveals that the switching property of our device originates from the oxidation/reduction reaction occurred at the interface of Ti/TiO2. The device exhibited high ON/OFF ratio (>104), long retention and good endurance performance at RT.

KW - Electrical properties

KW - Hydrothermal

KW - Nanorods

KW - Resistive memory

KW - Structural properties

KW - Titanium oxide

UR - https://www.scopus.com/pages/publications/84874841092

U2 - 10.1016/j.sna.2013.02.009

DO - 10.1016/j.sna.2013.02.009

M3 - Article

AN - SCOPUS:84874841092

SN - 0924-4247

VL - 194

SP - 135

EP - 139

JO - Sensors and Actuators A: Physical

JF - Sensors and Actuators A: Physical

ER -

Reproducible resistive switching in hydrothermal processed TiO₂ nanorod film for non-volatile memory applications

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Keywords

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