Reproducible unipolar resistive switching behaviors in the metal-deficient CoOx thin film

June Sik Kwak, Young Ho Do, Yoon Cheol Bae, Hyunsik Im, Jin Pyo Hong

Research output: Contribution to journalArticlepeer-review

21 Scopus citations

Abstract

Pt/CoOx/Pt tri-layers exhibited reproducible and stable unipolar switching under a dc sweeping voltage. In order to investigate the role of oxygen reduction in the metal-deficient CoOx layer, resistive switching of the post-annealed CoOx thin film was compared with those of the as-deposited CoOx thin film. X-ray photoemission spectroscopy showed larger reproducible resistance switching and decreasing of current level in the post-annealed CoOx thin film. This may be explained by a reduction in oxygen stoichiometry without phase transformation of the CoO x. In addition, stable switching in post-annealed CoOx layer is considered to originate from the decrease of the Co vacancies in local Co3O4 region partially distributed in the whole CoO x layer, not in the dominant CoO.

Original languageEnglish
Pages (from-to)6437-6440
Number of pages4
JournalThin Solid Films
Volume518
Issue number22
DOIs
StatePublished - 1 Sep 2010

Keywords

  • CoO
  • Nonvolatile memory
  • ReRAM
  • Resistive switching

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