Abstract
Pt/CoOx/Pt tri-layers exhibited reproducible and stable unipolar switching under a dc sweeping voltage. In order to investigate the role of oxygen reduction in the metal-deficient CoOx layer, resistive switching of the post-annealed CoOx thin film was compared with those of the as-deposited CoOx thin film. X-ray photoemission spectroscopy showed larger reproducible resistance switching and decreasing of current level in the post-annealed CoOx thin film. This may be explained by a reduction in oxygen stoichiometry without phase transformation of the CoO x. In addition, stable switching in post-annealed CoOx layer is considered to originate from the decrease of the Co vacancies in local Co3O4 region partially distributed in the whole CoO x layer, not in the dominant CoO.
Original language | English |
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Pages (from-to) | 6437-6440 |
Number of pages | 4 |
Journal | Thin Solid Films |
Volume | 518 |
Issue number | 22 |
DOIs | |
State | Published - 1 Sep 2010 |
Keywords
- CoO
- Nonvolatile memory
- ReRAM
- Resistive switching