Resistive Switching and Synaptic Characteristics in ZnO/TaON-Based RRAM for Neuromorphic System

Inho Oh, Juyeong Pyo, Sungjun Kim

Research output: Contribution to journalArticlepeer-review

25 Scopus citations

Abstract

We fabricated an ITO/ZnO/TaON/TaN device as nonvolatile memory (NVM) with resistive switching for complementary metal-oxide-semiconductor (CMOS) compatibility. It is appropriate for the age of big data, which demands high speed and capacity. We produced a TaON layer by depositing a ZnO layer on a TaN layer using an oxygen-reactive radio frequency (RF) sputtering system. The bi-layer formation of ZnO and TaON interferes with the filament rupture after the forming process and then raises the current level slightly. The current levels were divided into high-and low-compliance modes. The retention, endurance, and pulse conductance were verified with a neuromorphic device. This device was stable and less consumed when it was in low mode rather than high mode.

Original languageEnglish
Article number2185
JournalNanomaterials
Volume12
Issue number13
DOIs
StatePublished - 1 Jul 2022

Keywords

  • bilayer
  • low and high current
  • memristor
  • resistive switching
  • TaON
  • ZnO

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