Resistive switching characteristics and mechanism of bilayer HfO₂/ZrO₂ structure deposited by radio-frequency sputtering for nonvolatile memory

Engineering

• Resistive 100%
• Radio Frequency 100%
• Nonvolatile Memory 100%
• Mols 50%
• Room Temperature 50%
• Thin Films 25%
• Oxygen Vacancy 25%
• Gibbs Free Energy 25%
• Ray Photoelectron Spectroscopy 25%
• High Resistance State 25%
• Oxygen Ion 25%
• Field Region 25%
• Gaussians 25%
• Transport Mechanism 25%
• High Thermal Conductivity 25%

Physics

• Resistive Switching 100%
• Room Temperature 50%
• Oxygen Vacancy 25%
• Oxygen Ion 25%
• X Ray Spectroscopy 25%
• Thin Films 25%
• Gaussian Distribution 25%

Material Science

• Zirconia 100%
• Radio Frequency Sputtering 100%
• X-Ray Photoelectron Spectroscopy 16%
• Oxidation Reaction 16%
• Oxygen Vacancy 16%
• Thermal Conductivity 16%