Resistive switching characteristics and mechanism of bilayer HfO2/ZrO2 structure deposited by radio-frequency sputtering for nonvolatile memory

Muhammad Ismail, Zahida Batool, Khalid Mahmood, Anwar Manzoor Rana, Byung Do Yang, Sungjun Kim

Research output: Contribution to journal › Article › peer-review

51 Scopus citations

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