Resistive switching characteristics of Pt/CeOx/TiN memory device

Muhammad Ismail; Ijaz Talib; Chun Yang Huang; Chung Jung Hung; Tsung Ling Tsai; Jheng Hong Jieng; Umesh Chand; Chun An Lin; Ejaz Ahmed; Anwar Manzoor Rana; Muhammad Younus Nadeem; Tseung Yuen Tseng

doi:10.7567/JJAP.53.060303

Resistive switching characteristics of Pt/CeO_x/TiN memory device

Muhammad Ismail, Ijaz Talib, Chun Yang Huang, Chung Jung Hung, Tsung Ling Tsai, Jheng Hong Jieng, Umesh Chand, Chun An Lin, Ejaz Ahmed, Anwar Manzoor Rana, Muhammad Younus Nadeem, Tseung Yuen Tseng

Department of Electronics & Electrical Engineering

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

The resistive switching characteristics of Pt/CeO_x/TiN memory devices are investigated for potential applications in nonvolatile resistive random access memory (RRAM). The X-ray diffraction characteristics of the sputtered CeO_x layer indicate the formation of nanocrystalline single-phase CeO₂ with a cubic fluorite structure. The existence of oxygen vacancies in the Pt/CeO_x/TiN memory device was determined by X-ray photoelectron spectroscopic studies, while the presence of an interfacial layer between CeO_x and the TiN bottom electrode was investigated by Xray diffraction and high resolution transmission electron microscopy. The TiON layer formed at the TiN/CeO_x interface seems to play a key role in the resistive switching mechanism of the device. The present CeO _x-based device shows excellent bipolar resistive switching characteristics, including a low operation current (100 μA), high ON/OFF resistance ratio (∼10⁵), and good retention/stress characteristics at both room temperature and 85 °C.

Original language	English
Article number	060303
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	53
Issue number	6
DOIs	https://doi.org/10.7567/JJAP.53.060303
State	Published - Jun 2014

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Ismail, M., Talib, I., Huang, C. Y., Hung, C. J., Tsai, T. L., Jieng, J. H., Chand, U., Lin, C. A., Ahmed, E., Rana, A. M., Nadeem, M. Y., & Tseng, T. Y. (2014). Resistive switching characteristics of Pt/CeO_x/TiN memory device. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 53(6), Article 060303. https://doi.org/10.7567/JJAP.53.060303

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title = "Resistive switching characteristics of Pt/CeOx/TiN memory device",

abstract = "The resistive switching characteristics of Pt/CeOx/TiN memory devices are investigated for potential applications in nonvolatile resistive random access memory (RRAM). The X-ray diffraction characteristics of the sputtered CeOx layer indicate the formation of nanocrystalline single-phase CeO2 with a cubic fluorite structure. The existence of oxygen vacancies in the Pt/CeOx/TiN memory device was determined by X-ray photoelectron spectroscopic studies, while the presence of an interfacial layer between CeOx and the TiN bottom electrode was investigated by Xray diffraction and high resolution transmission electron microscopy. The TiON layer formed at the TiN/CeOx interface seems to play a key role in the resistive switching mechanism of the device. The present CeO x-based device shows excellent bipolar resistive switching characteristics, including a low operation current (100 μA), high ON/OFF resistance ratio (∼105), and good retention/stress characteristics at both room temperature and 85 °C.",

author = "Muhammad Ismail and Ijaz Talib and Huang, {Chun Yang} and Hung, {Chung Jung} and Tsai, {Tsung Ling} and Jieng, {Jheng Hong} and Umesh Chand and Lin, {Chun An} and Ejaz Ahmed and Rana, {Anwar Manzoor} and Nadeem, {Muhammad Younus} and Tseng, {Tseung Yuen}",

year = "2014",

month = jun,

doi = "10.7567/JJAP.53.060303",

language = "English",

volume = "53",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers",

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publisher = "Japan Society of Applied Physics",

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AU - Ismail, Muhammad

AU - Talib, Ijaz

AU - Huang, Chun Yang

AU - Hung, Chung Jung

AU - Tsai, Tsung Ling

AU - Jieng, Jheng Hong

AU - Chand, Umesh

AU - Lin, Chun An

AU - Ahmed, Ejaz

AU - Rana, Anwar Manzoor

AU - Nadeem, Muhammad Younus

AU - Tseng, Tseung Yuen

PY - 2014/6

Y1 - 2014/6

N2 - The resistive switching characteristics of Pt/CeOx/TiN memory devices are investigated for potential applications in nonvolatile resistive random access memory (RRAM). The X-ray diffraction characteristics of the sputtered CeOx layer indicate the formation of nanocrystalline single-phase CeO2 with a cubic fluorite structure. The existence of oxygen vacancies in the Pt/CeOx/TiN memory device was determined by X-ray photoelectron spectroscopic studies, while the presence of an interfacial layer between CeOx and the TiN bottom electrode was investigated by Xray diffraction and high resolution transmission electron microscopy. The TiON layer formed at the TiN/CeOx interface seems to play a key role in the resistive switching mechanism of the device. The present CeO x-based device shows excellent bipolar resistive switching characteristics, including a low operation current (100 μA), high ON/OFF resistance ratio (∼105), and good retention/stress characteristics at both room temperature and 85 °C.

AB - The resistive switching characteristics of Pt/CeOx/TiN memory devices are investigated for potential applications in nonvolatile resistive random access memory (RRAM). The X-ray diffraction characteristics of the sputtered CeOx layer indicate the formation of nanocrystalline single-phase CeO2 with a cubic fluorite structure. The existence of oxygen vacancies in the Pt/CeOx/TiN memory device was determined by X-ray photoelectron spectroscopic studies, while the presence of an interfacial layer between CeOx and the TiN bottom electrode was investigated by Xray diffraction and high resolution transmission electron microscopy. The TiON layer formed at the TiN/CeOx interface seems to play a key role in the resistive switching mechanism of the device. The present CeO x-based device shows excellent bipolar resistive switching characteristics, including a low operation current (100 μA), high ON/OFF resistance ratio (∼105), and good retention/stress characteristics at both room temperature and 85 °C.

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DO - 10.7567/JJAP.53.060303

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VL - 53

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

IS - 6

M1 - 060303

ER -

Resistive switching characteristics of Pt/CeO_x/TiN memory device

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