Resistive switching characteristics of Si3N4-based resistive-switching random-access memory cell with tunnel barrier for high density integration and low-power applications

  • Sungjun Kim
  • , Sunghun Jung
  • , Min Hwi Kim
  • , Seongjae Cho
  • , Byung Gook Park

Research output: Contribution to journal › Article › peer-review

95 Scopus citations

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