Resistive switching characteristics of ZnO-based RRAM on silicon substrate

Dahye Kim, Jiwoong Shin, Sungjun Kim

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

In this work, we conducted the following analysis of Ni/ZnO (20 nm)/n-type Si RRAM device with three different compliance currents (CCs). We compared I-V curves, including set, reset voltages, and resistance of LRS, HRS states for each CCs. For an accurate comparison of each case, statistical analysis is presented. In each case, the average value and the relative standard deviation (RSD) of resistance are calculated to analyze the characteristics of the distribution. The best variability is observed at higher CC (5 mA). In addition, we validated the non-volatile properties of the device using the retention data for each of the CCs. Based on this comparison, we proposed the most appropriate CC of the device operation. Also, a pulse was applied to measure the current waveform and demonstrate the regular operation of the device. Finally, the resistance of LRS and HRS states was measured by pulse. We statistically compared the measured pulse data with the DC data.

Original languageEnglish
Article number1572
JournalMetals
Volume11
Issue number10
DOIs
StatePublished - Oct 2021

Keywords

  • Memory device
  • Memristor
  • Resistive switching
  • ZnO

Fingerprint

Dive into the research topics of 'Resistive switching characteristics of ZnO-based RRAM on silicon substrate'. Together they form a unique fingerprint.

Cite this