Resistive switching effect for ZnO hybrid memory with metal-oxide nanocrystals

Dong Uk Lee; Eun Kyu Kim; Won Ju Cho; Young Ho Kim; Hyunsik Im

doi:10.1016/j.tsf.2012.02.044

Resistive switching effect for ZnO hybrid memory with metal-oxide nanocrystals

Dong Uk Lee, Eun Kyu Kim, Won Ju Cho, Young Ho Kim, Hyunsik Im

Division of System Semiconductor

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

ZnO memory device with SnO ₂ nanocrystals embedded in a biphenyl-tertracarboxylic dianhydride-phenylen diamine polyimide layer was fabricated, and its electrical properties were evaluated. The complementary resistive switching effects with a current bistability appeared during voltage sweeping in the range of ± 4 V and ± 5 V, respectively. This switching effect of current-voltage may be originated from a resistance fluctuation due to the charge trapping into SnO ₂ nanocrystals. In the bipolar resistance switching behavior, the ratio of high-resistance state (HRS) and low-resistance state (LRS) currents was about 4.4 × 10 ⁴ at 1 V. The data retention of LRS/HRS currents was maintained about 2.2 × 10 ³ after 10 ³ s.

Original language	English
Pages (from-to)	98-101
Number of pages	4
Journal	Thin Solid Films
Volume	521
DOIs	https://doi.org/10.1016/j.tsf.2012.02.044
State	Published - 30 Oct 2012

Keywords

Hybrid
Nano-crystals
Nonvolatile memory
Polyimide
Resistance random access memory
SnO

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10.1016/j.tsf.2012.02.044

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@article{8430aa2cf9a6463db566f56178a33c28,

title = "Resistive switching effect for ZnO hybrid memory with metal-oxide nanocrystals",

abstract = "ZnO memory device with SnO 2 nanocrystals embedded in a biphenyl-tertracarboxylic dianhydride-phenylen diamine polyimide layer was fabricated, and its electrical properties were evaluated. The complementary resistive switching effects with a current bistability appeared during voltage sweeping in the range of ± 4 V and ± 5 V, respectively. This switching effect of current-voltage may be originated from a resistance fluctuation due to the charge trapping into SnO 2 nanocrystals. In the bipolar resistance switching behavior, the ratio of high-resistance state (HRS) and low-resistance state (LRS) currents was about 4.4 × 10 4 at 1 V. The data retention of LRS/HRS currents was maintained about 2.2 × 10 3 after 10 3 s.",

keywords = "Hybrid, Nano-crystals, Nonvolatile memory, Polyimide, Resistance random access memory, SnO",

author = "Lee, {Dong Uk} and Kim, {Eun Kyu} and Cho, {Won Ju} and Kim, {Young Ho} and Hyunsik Im",

year = "2012",

month = oct,

day = "30",

doi = "10.1016/j.tsf.2012.02.044",

language = "English",

volume = "521",

pages = "98--101",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Resistive switching effect for ZnO hybrid memory with metal-oxide nanocrystals

AU - Lee, Dong Uk

AU - Kim, Eun Kyu

AU - Cho, Won Ju

AU - Kim, Young Ho

AU - Im, Hyunsik

PY - 2012/10/30

Y1 - 2012/10/30

N2 - ZnO memory device with SnO 2 nanocrystals embedded in a biphenyl-tertracarboxylic dianhydride-phenylen diamine polyimide layer was fabricated, and its electrical properties were evaluated. The complementary resistive switching effects with a current bistability appeared during voltage sweeping in the range of ± 4 V and ± 5 V, respectively. This switching effect of current-voltage may be originated from a resistance fluctuation due to the charge trapping into SnO 2 nanocrystals. In the bipolar resistance switching behavior, the ratio of high-resistance state (HRS) and low-resistance state (LRS) currents was about 4.4 × 10 4 at 1 V. The data retention of LRS/HRS currents was maintained about 2.2 × 10 3 after 10 3 s.

AB - ZnO memory device with SnO 2 nanocrystals embedded in a biphenyl-tertracarboxylic dianhydride-phenylen diamine polyimide layer was fabricated, and its electrical properties were evaluated. The complementary resistive switching effects with a current bistability appeared during voltage sweeping in the range of ± 4 V and ± 5 V, respectively. This switching effect of current-voltage may be originated from a resistance fluctuation due to the charge trapping into SnO 2 nanocrystals. In the bipolar resistance switching behavior, the ratio of high-resistance state (HRS) and low-resistance state (LRS) currents was about 4.4 × 10 4 at 1 V. The data retention of LRS/HRS currents was maintained about 2.2 × 10 3 after 10 3 s.

KW - Hybrid

KW - Nano-crystals

KW - Nonvolatile memory

KW - Polyimide

KW - Resistance random access memory

KW - SnO

UR - http://www.scopus.com/inward/record.url?scp=84867050816&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2012.02.044

DO - 10.1016/j.tsf.2012.02.044

M3 - Article

AN - SCOPUS:84867050816

SN - 0040-6090

VL - 521

SP - 98

EP - 101

JO - Thin Solid Films

JF - Thin Solid Films

ER -

Resistive switching effect for ZnO hybrid memory with metal-oxide nanocrystals

Abstract

Keywords

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