Role of insertion layer controlling wavelength in InGaAs quantum dots

Se Ki Park; Young Ju Park; Eun Kyu Kim; Chan Jin Park; Hoon Young Cho; Young Soo Lim; Jeong Yong Lee; Cheon Lee

doi:10.1143/jjap.41.4378

Role of insertion layer controlling wavelength in InGaAs quantum dots

Se Ki Park, Young Ju Park, Eun Kyu Kim, Chan Jin Park, Hoon Young Cho, Young Soo Lim, Jeong Yong Lee, Cheon Lee

Department of Physics

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

We have observed the red shift of the emission wavelength in InGaAs/GaAs quantum dots by employing a very thin AlGaAs insertion layer (IL). The thin AlGaAs layer of less than 10 nm in thickness was inserted immediately after the formation of selfassembled InGaAs quantum dots (QDs) on a GaAs buffer layer. The low temperature (15 K) photoluminescence peak typically appears at around 1.1 μm in the sample without IL whereas it is red-shifted up to 1.25 μm as the IL thickness increases. It is interpreted that the thin AlGaAs IL releases the local strain around QDs asymmetrically.

Original language	English
Pages (from-to)	4378-4381
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	41
Issue number	6 B
DOIs	https://doi.org/10.1143/jjap.41.4378
State	Published - Jun 2002

Keywords

AIGaAs insertion layer (IL)
InGaAs/GaAs quantum dots
Local strain
Metal organic chemical vapor deposition
Red-shift

Access to Document

10.1143/jjap.41.4378

Cite this

@article{7e7a870847fc4f7996dd39e8de06d587,

title = "Role of insertion layer controlling wavelength in InGaAs quantum dots",

abstract = "We have observed the red shift of the emission wavelength in InGaAs/GaAs quantum dots by employing a very thin AlGaAs insertion layer (IL). The thin AlGaAs layer of less than 10 nm in thickness was inserted immediately after the formation of selfassembled InGaAs quantum dots (QDs) on a GaAs buffer layer. The low temperature (15 K) photoluminescence peak typically appears at around 1.1 μm in the sample without IL whereas it is red-shifted up to 1.25 μm as the IL thickness increases. It is interpreted that the thin AlGaAs IL releases the local strain around QDs asymmetrically.",

keywords = "AIGaAs insertion layer (IL), InGaAs/GaAs quantum dots, Local strain, Metal organic chemical vapor deposition, Red-shift",

author = "Park, {Se Ki} and Park, {Young Ju} and Kim, {Eun Kyu} and Park, {Chan Jin} and Cho, {Hoon Young} and Lim, {Young Soo} and Lee, {Jeong Yong} and Cheon Lee",

year = "2002",

month = jun,

doi = "10.1143/jjap.41.4378",

language = "English",

volume = "41",

pages = "4378--4381",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "6 B",

}

TY - JOUR

T1 - Role of insertion layer controlling wavelength in InGaAs quantum dots

AU - Park, Se Ki

AU - Park, Young Ju

AU - Kim, Eun Kyu

AU - Park, Chan Jin

AU - Cho, Hoon Young

AU - Lim, Young Soo

AU - Lee, Jeong Yong

AU - Lee, Cheon

PY - 2002/6

Y1 - 2002/6

N2 - We have observed the red shift of the emission wavelength in InGaAs/GaAs quantum dots by employing a very thin AlGaAs insertion layer (IL). The thin AlGaAs layer of less than 10 nm in thickness was inserted immediately after the formation of selfassembled InGaAs quantum dots (QDs) on a GaAs buffer layer. The low temperature (15 K) photoluminescence peak typically appears at around 1.1 μm in the sample without IL whereas it is red-shifted up to 1.25 μm as the IL thickness increases. It is interpreted that the thin AlGaAs IL releases the local strain around QDs asymmetrically.

AB - We have observed the red shift of the emission wavelength in InGaAs/GaAs quantum dots by employing a very thin AlGaAs insertion layer (IL). The thin AlGaAs layer of less than 10 nm in thickness was inserted immediately after the formation of selfassembled InGaAs quantum dots (QDs) on a GaAs buffer layer. The low temperature (15 K) photoluminescence peak typically appears at around 1.1 μm in the sample without IL whereas it is red-shifted up to 1.25 μm as the IL thickness increases. It is interpreted that the thin AlGaAs IL releases the local strain around QDs asymmetrically.

KW - AIGaAs insertion layer (IL)

KW - InGaAs/GaAs quantum dots

KW - Local strain

KW - Metal organic chemical vapor deposition

KW - Red-shift

UR - http://www.scopus.com/inward/record.url?scp=0036614044&partnerID=8YFLogxK

U2 - 10.1143/jjap.41.4378

DO - 10.1143/jjap.41.4378

M3 - Article

AN - SCOPUS:0036614044

SN - 0021-4922

VL - 41

SP - 4378

EP - 4381

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

IS - 6 B

ER -

Role of insertion layer controlling wavelength in InGaAs quantum dots

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this