Role of insertion layer controlling wavelength in InGaAs quantum dots

Se Ki Park; Young Ju Park; Eun Kyu Kim; Chan Jin Park; Hoon Young Cho; Young Soo Lim; Jeong Yong Lee; Cheon Lee

doi:10.1143/jjap.41.4378

Role of insertion layer controlling wavelength in InGaAs quantum dots

Se Ki Park
, Young Ju Park
, Eun Kyu Kim
, Chan Jin Park
, Hoon Young Cho
, Young Soo Lim
, Jeong Yong Lee
, Cheon Lee

Department of Physics

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

We have observed the red shift of the emission wavelength in InGaAs/GaAs quantum dots by employing a very thin AlGaAs insertion layer (IL). The thin AlGaAs layer of less than 10 nm in thickness was inserted immediately after the formation of selfassembled InGaAs quantum dots (QDs) on a GaAs buffer layer. The low temperature (15 K) photoluminescence peak typically appears at around 1.1 μm in the sample without IL whereas it is red-shifted up to 1.25 μm as the IL thickness increases. It is interpreted that the thin AlGaAs IL releases the local strain around QDs asymmetrically.

Original language	English
Pages (from-to)	4378-4381
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	41
Issue number	6 B
DOIs	https://doi.org/10.1143/jjap.41.4378
State	Published - Jun 2002

Keywords

AIGaAs insertion layer (IL)
InGaAs/GaAs quantum dots
Local strain
Metal organic chemical vapor deposition
Red-shift

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10.1143/jjap.41.4378

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title = "Role of insertion layer controlling wavelength in InGaAs quantum dots",

abstract = "We have observed the red shift of the emission wavelength in InGaAs/GaAs quantum dots by employing a very thin AlGaAs insertion layer (IL). The thin AlGaAs layer of less than 10 nm in thickness was inserted immediately after the formation of selfassembled InGaAs quantum dots (QDs) on a GaAs buffer layer. The low temperature (15 K) photoluminescence peak typically appears at around 1.1 μm in the sample without IL whereas it is red-shifted up to 1.25 μm as the IL thickness increases. It is interpreted that the thin AlGaAs IL releases the local strain around QDs asymmetrically.",

keywords = "AIGaAs insertion layer (IL), InGaAs/GaAs quantum dots, Local strain, Metal organic chemical vapor deposition, Red-shift",

author = "Park, \{Se Ki\} and Park, \{Young Ju\} and Kim, \{Eun Kyu\} and Park, \{Chan Jin\} and Cho, \{Hoon Young\} and Lim, \{Young Soo\} and Lee, \{Jeong Yong\} and Cheon Lee",

year = "2002",

month = jun,

doi = "10.1143/jjap.41.4378",

language = "English",

volume = "41",

pages = "4378--4381",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers",

issn = "0021-4922",

publisher = "Institute of Physics",

number = "6 B",

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TY - JOUR

T1 - Role of insertion layer controlling wavelength in InGaAs quantum dots

AU - Park, Se Ki

AU - Park, Young Ju

AU - Kim, Eun Kyu

AU - Park, Chan Jin

AU - Cho, Hoon Young

AU - Lim, Young Soo

AU - Lee, Jeong Yong

AU - Lee, Cheon

PY - 2002/6

Y1 - 2002/6

N2 - We have observed the red shift of the emission wavelength in InGaAs/GaAs quantum dots by employing a very thin AlGaAs insertion layer (IL). The thin AlGaAs layer of less than 10 nm in thickness was inserted immediately after the formation of selfassembled InGaAs quantum dots (QDs) on a GaAs buffer layer. The low temperature (15 K) photoluminescence peak typically appears at around 1.1 μm in the sample without IL whereas it is red-shifted up to 1.25 μm as the IL thickness increases. It is interpreted that the thin AlGaAs IL releases the local strain around QDs asymmetrically.

AB - We have observed the red shift of the emission wavelength in InGaAs/GaAs quantum dots by employing a very thin AlGaAs insertion layer (IL). The thin AlGaAs layer of less than 10 nm in thickness was inserted immediately after the formation of selfassembled InGaAs quantum dots (QDs) on a GaAs buffer layer. The low temperature (15 K) photoluminescence peak typically appears at around 1.1 μm in the sample without IL whereas it is red-shifted up to 1.25 μm as the IL thickness increases. It is interpreted that the thin AlGaAs IL releases the local strain around QDs asymmetrically.

KW - AIGaAs insertion layer (IL)

KW - InGaAs/GaAs quantum dots

KW - Local strain

KW - Metal organic chemical vapor deposition

KW - Red-shift

UR - https://www.scopus.com/pages/publications/0036614044

U2 - 10.1143/jjap.41.4378

DO - 10.1143/jjap.41.4378

M3 - Article

AN - SCOPUS:0036614044

SN - 0021-4922

VL - 41

SP - 4378

EP - 4381

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

IS - 6 B

ER -

Role of insertion layer controlling wavelength in InGaAs quantum dots

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