Roles of interfacial TiOx N1-x layer and TiN electrode on bipolar resistive switching in TiN/ TiO2 /TiN frameworks

June Sik Kwak; Young Ho Do; Yoon Cheol Bae; Hyun Sik Im; Jong Hee Yoo; Min Gyu Sung; Yun Taek Hwang; Jin Pyo Hong

doi:10.1063/1.3442499

Roles of interfacial TiO_x N_1-x layer and TiN electrode on bipolar resistive switching in TiN/ TiO₂ /TiN frameworks

June Sik Kwak, Young Ho Do, Yoon Cheol Bae, Hyun Sik Im, Jong Hee Yoo, Min Gyu Sung, Yun Taek Hwang, Jin Pyo Hong

Division of System Semiconductor

Research output: Contribution to journal › Article › peer-review

51 Scopus citations

Abstract

Reversible counter-clockwise and clockwise resistive switching in a TiN/ TiO₂ /TiN structure was studied by different polarities of bias voltage. The nature of the bipolar switching phenomenon is related to the creation and annihilation of filament paths caused by redox reactions at locally confined interfaces between the TiO₂ layer and TiN electrode. The analysis of electron energy loss spectroscopy (EELS) confirmed the formation of interfacial TiO_x N_1-x layer between the TiO₂ and TiN bottom electrode. The TiO_x N_1-x layer reduces current levels of ON and OFF states by partially blocking oxygen ion drift to the TiN bottom electrode.

Original language	English
Article number	223502
Journal	Applied Physics Letters
Volume	96
Issue number	22
DOIs	https://doi.org/10.1063/1.3442499
State	Published - 31 May 2010

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@article{42a3a147fc984af087804a8accb1c72d,

title = "Roles of interfacial TiOx N1-x layer and TiN electrode on bipolar resistive switching in TiN/ TiO2 /TiN frameworks",

abstract = "Reversible counter-clockwise and clockwise resistive switching in a TiN/ TiO2 /TiN structure was studied by different polarities of bias voltage. The nature of the bipolar switching phenomenon is related to the creation and annihilation of filament paths caused by redox reactions at locally confined interfaces between the TiO2 layer and TiN electrode. The analysis of electron energy loss spectroscopy (EELS) confirmed the formation of interfacial TiOx N1-x layer between the TiO2 and TiN bottom electrode. The TiOx N1-x layer reduces current levels of ON and OFF states by partially blocking oxygen ion drift to the TiN bottom electrode.",

author = "Kwak, {June Sik} and Do, {Young Ho} and Bae, {Yoon Cheol} and Im, {Hyun Sik} and Yoo, {Jong Hee} and Sung, {Min Gyu} and Hwang, {Yun Taek} and Hong, {Jin Pyo}",

year = "2010",

month = may,

day = "31",

doi = "10.1063/1.3442499",

language = "English",

volume = "96",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "22",

}

TY - JOUR

T1 - Roles of interfacial TiOx N1-x layer and TiN electrode on bipolar resistive switching in TiN/ TiO2 /TiN frameworks

AU - Kwak, June Sik

AU - Do, Young Ho

AU - Bae, Yoon Cheol

AU - Im, Hyun Sik

AU - Yoo, Jong Hee

AU - Sung, Min Gyu

AU - Hwang, Yun Taek

AU - Hong, Jin Pyo

PY - 2010/5/31

Y1 - 2010/5/31

N2 - Reversible counter-clockwise and clockwise resistive switching in a TiN/ TiO2 /TiN structure was studied by different polarities of bias voltage. The nature of the bipolar switching phenomenon is related to the creation and annihilation of filament paths caused by redox reactions at locally confined interfaces between the TiO2 layer and TiN electrode. The analysis of electron energy loss spectroscopy (EELS) confirmed the formation of interfacial TiOx N1-x layer between the TiO2 and TiN bottom electrode. The TiOx N1-x layer reduces current levels of ON and OFF states by partially blocking oxygen ion drift to the TiN bottom electrode.

AB - Reversible counter-clockwise and clockwise resistive switching in a TiN/ TiO2 /TiN structure was studied by different polarities of bias voltage. The nature of the bipolar switching phenomenon is related to the creation and annihilation of filament paths caused by redox reactions at locally confined interfaces between the TiO2 layer and TiN electrode. The analysis of electron energy loss spectroscopy (EELS) confirmed the formation of interfacial TiOx N1-x layer between the TiO2 and TiN bottom electrode. The TiOx N1-x layer reduces current levels of ON and OFF states by partially blocking oxygen ion drift to the TiN bottom electrode.

UR - http://www.scopus.com/inward/record.url?scp=77953594299&partnerID=8YFLogxK

U2 - 10.1063/1.3442499

DO - 10.1063/1.3442499

M3 - Article

AN - SCOPUS:77953594299

SN - 0003-6951

VL - 96

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

M1 - 223502

ER -

Roles of interfacial TiO_x N_1-x layer and TiN electrode on bipolar resistive switching in TiN/ TiO₂ /TiN frameworks

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