Room temperature deposited oxygen-deficient CeO                         2−x                          layer for multilevel resistive switching memory

Muhammad Ismail; Asma Ahmad; Khalid Mahmood; Tahira Akbar; Anwar Manzoor Rana; Jinju Lee; Sungjun Kim

doi:10.1016/j.apsusc.2019.04.013

Room temperature deposited oxygen-deficient CeO _2−x layer for multilevel resistive switching memory

Muhammad Ismail, Asma Ahmad, Khalid Mahmood, Tahira Akbar, Anwar Manzoor Rana, Jinju Lee, Sungjun Kim

Department of Electronics & Electrical Engineering

Research output: Contribution to journal › Article › peer-review

29 Scopus citations

Abstract

Precise switchover of numerous resistance states is desirable to achieve repeatable multilevel data storage memory windows. However, this could be hindered by the inherent random nature of oxygen vacancy creation. In this study, oxygen-deficient CeO _2−x thin films were fabricated on indium tin oxide (ITO)-coated/glass substrates using radio-frequency magnetron sputtering at room temperature to obtain simple Ni/CeO _2−x /ITO/glass devices. Multilevel bipolar resistive switching characteristics were investigated by controlling the RESET voltage and current compliance. The device could be regarded as four-level switching memory, controlled by the RESET voltage. An increase in the RESET-stop voltage from −1.5 to −2.0 V increased the Schottky barrier height, leading to an improvement in the ON/OFF ratio. The multilevel resistive switching behavior could be attributed to the formation and partial rupture of conductive filaments owing to interfacial oxygen ion migration. This study shows the potentials of the Ni/CeO _2−x /ITO/glass devices for multilevel data storage resistive random-access memory applications.

Original language	English
Pages (from-to)	803-810
Number of pages	8
Journal	Applied Surface Science
Volume	483
DOIs	https://doi.org/10.1016/j.apsusc.2019.04.013
State	Published - 31 Jul 2019

Keywords

Multilevel resistive switching
Oxygen vacancy
Oxygen-deficient CeO film
Schottky emission

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10.1016/j.apsusc.2019.04.013

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title = " Room temperature deposited oxygen-deficient CeO 2−x layer for multilevel resistive switching memory ",

abstract = " Precise switchover of numerous resistance states is desirable to achieve repeatable multilevel data storage memory windows. However, this could be hindered by the inherent random nature of oxygen vacancy creation. In this study, oxygen-deficient CeO 2−x thin films were fabricated on indium tin oxide (ITO)-coated/glass substrates using radio-frequency magnetron sputtering at room temperature to obtain simple Ni/CeO 2−x /ITO/glass devices. Multilevel bipolar resistive switching characteristics were investigated by controlling the RESET voltage and current compliance. The device could be regarded as four-level switching memory, controlled by the RESET voltage. An increase in the RESET-stop voltage from −1.5 to −2.0 V increased the Schottky barrier height, leading to an improvement in the ON/OFF ratio. The multilevel resistive switching behavior could be attributed to the formation and partial rupture of conductive filaments owing to interfacial oxygen ion migration. This study shows the potentials of the Ni/CeO 2−x /ITO/glass devices for multilevel data storage resistive random-access memory applications.",

keywords = "Multilevel resistive switching, Oxygen vacancy, Oxygen-deficient CeO film, Schottky emission",

author = "Muhammad Ismail and Asma Ahmad and Khalid Mahmood and Tahira Akbar and Rana, {Anwar Manzoor} and Jinju Lee and Sungjun Kim",

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doi = "10.1016/j.apsusc.2019.04.013",

language = "English",

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Room temperature deposited oxygen-deficient CeO _2−x layer for multilevel resistive switching memory . / Ismail, Muhammad; Ahmad, Asma; Mahmood, Khalid et al.
In: Applied Surface Science, Vol. 483, 31.07.2019, p. 803-810.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Room temperature deposited oxygen-deficient CeO 2−x layer for multilevel resistive switching memory

AU - Ismail, Muhammad

AU - Ahmad, Asma

AU - Mahmood, Khalid

AU - Akbar, Tahira

AU - Rana, Anwar Manzoor

AU - Lee, Jinju

AU - Kim, Sungjun

PY - 2019/7/31

Y1 - 2019/7/31

N2 - Precise switchover of numerous resistance states is desirable to achieve repeatable multilevel data storage memory windows. However, this could be hindered by the inherent random nature of oxygen vacancy creation. In this study, oxygen-deficient CeO 2−x thin films were fabricated on indium tin oxide (ITO)-coated/glass substrates using radio-frequency magnetron sputtering at room temperature to obtain simple Ni/CeO 2−x /ITO/glass devices. Multilevel bipolar resistive switching characteristics were investigated by controlling the RESET voltage and current compliance. The device could be regarded as four-level switching memory, controlled by the RESET voltage. An increase in the RESET-stop voltage from −1.5 to −2.0 V increased the Schottky barrier height, leading to an improvement in the ON/OFF ratio. The multilevel resistive switching behavior could be attributed to the formation and partial rupture of conductive filaments owing to interfacial oxygen ion migration. This study shows the potentials of the Ni/CeO 2−x /ITO/glass devices for multilevel data storage resistive random-access memory applications.

AB - Precise switchover of numerous resistance states is desirable to achieve repeatable multilevel data storage memory windows. However, this could be hindered by the inherent random nature of oxygen vacancy creation. In this study, oxygen-deficient CeO 2−x thin films were fabricated on indium tin oxide (ITO)-coated/glass substrates using radio-frequency magnetron sputtering at room temperature to obtain simple Ni/CeO 2−x /ITO/glass devices. Multilevel bipolar resistive switching characteristics were investigated by controlling the RESET voltage and current compliance. The device could be regarded as four-level switching memory, controlled by the RESET voltage. An increase in the RESET-stop voltage from −1.5 to −2.0 V increased the Schottky barrier height, leading to an improvement in the ON/OFF ratio. The multilevel resistive switching behavior could be attributed to the formation and partial rupture of conductive filaments owing to interfacial oxygen ion migration. This study shows the potentials of the Ni/CeO 2−x /ITO/glass devices for multilevel data storage resistive random-access memory applications.

KW - Multilevel resistive switching

KW - Oxygen vacancy

KW - Oxygen-deficient CeO film

KW - Schottky emission

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Room temperature deposited oxygen-deficient CeO _2−x layer for multilevel resistive switching memory

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Keywords

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