Room-temperature hydrogenation effect on Si- and Be-ion-implanted GaAs

Hoon Young Cho, Eun Kyu Kim, Ho Sub Lee, Suk Ki Min

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

Hydrogenation effects on Si- and Be-ion-implanted GaAs exposed to the hydrogen plasma were investigated. In the sample hydrogenated for 60 min at room temperature, electron mobilities were increased about 21% at 300 K and 1400 cm2/V s at 150 K, showing a little change of the activated Si donor profile. Also, by using deep-level transient spectroscopy and optical deep-level transient spectroscopy, it was observed that the electron and hole traps at Ec-0.62- and Ev+0.68-eV levels, which have been reported as defects due to the implanted damage, were efficiently decreased during the room-temperature hydrogenation. This effect persists during the anneal at 400°C during 5 min in an argon ambient.

Original languageEnglish
Pages (from-to)1690-1692
Number of pages3
JournalJournal of Applied Physics
Volume71
Issue number4
DOIs
StatePublished - 1992

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